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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2019-03-11T08:02:01Z A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation H. C.Cheng;S. M. Jang;T. L. Lee;L. T. Wang;T. C. Huang;M. H. Yu;M. H.Liao; M. H.Liao; M. H. Yu; T. C. Huang; L. T. Wang; T. L. Lee; S. M. Jang; H. C.Cheng
南台科技大學 2001-07 The Effect of Remote Plasma Nitridation on the Integrity of the Ultrathin Gate Dielectric Films in 0. 13mm CMOS Technology and Beyond S. F. Ting; Y. K. Fang; C. H. Chen; C. W. Yang; W. T. Hsieh; J. J. Ho; M. C. Yu; S. M. Jang; C. H. Yu; M. S. Liang; S. Chen; R. Shih;謝文哲
國立臺灣海洋大學 2001-07 The Effect of Remote Plasma Nitridation on the Integrity of the Ultrathin Gate Dielectric Films in 0.13 m CMOS Technology and Beyond S.F. Ting; Y.K. Fang; C.H. Chen; C.W. Yang; W.T. Hsieh; J.J. Ho; M.C. Yu; S.M. Jang; C.H. Yu; M.S. Liang; S. Chen; R. Shih

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