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Institution	Date	Title	Author
國立交通大學	2014-12-12T02:20:51Z	表面通道P型金氧半場效電晶體中以新閘極製程抑制硼穿透效應之研究	鍾昇鎮; Chung Shen-Chen; 施敏; S. M. Sze
國立交通大學	2014-12-12T02:20:51Z	低溫複晶矽薄膜電晶體之研究	吳子建; Tze-Chien Wu; 施敏; S. M. Sze
國立交通大學	2014-12-12T01:33:14Z	多重奈米通道複晶矽薄膜電晶體之製造與特性研究	陳稚軒; Chi-Shen Chen; 施敏; 張鼎張; S.M. Sze; Ting-Chang Chang
國立交通大學	2014-12-12T01:24:31Z	鈦奈米晶體應用於非揮發性記憶體	王派璿; Wang-pai-tsung; 施敏; S. M. Sze
國立中山大學	2009	Improved reliability of Mo nanocrystal memory with ammonia plasma treatment	C.C. Lin;T.C. Chang;C.H. Tu;W.R. Chen;C.W. Hu;S.M. Sze;T.Y. Tseng;S.C. Chen;J.Y. Lin
國立中山大學	2009	Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure	C.C. Lin;T.C. Chang;C.H. Tu;W.R. Chen;L.W. Feng;S.M. Sze;T.Y. Tseng;S.C. Chen;J.Y. Lin
國立中山大學	2009	NiSiGe nanocrystals for nonvolatile memory devices	C.W. Hu;T.C. Chang;C.H. Tu;C.N. Chiang;C.C. Lin;S.M. Sze;T.Y. Tseng
國立中山大學	2008	Tungsten Oxide/Tungsten Nanocrystals for Nonvolatile Memory Devices	C.H. Chen;T.C. Chang;I.H. Liao;P.B. Xi;U.S. Chen;Joe Hsieh;Jason Chen;Tensor Huang;S.M. Sze;J.R. Chen
國立中山大學	2007	Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;P.S. Lin;S.C. Chen;J.Y. Chin;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2007	Pi-shape gate Polycrystalline Silicon Thin-Film-Transistor for Nonvolatile Memory Applications	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;C.C. Ko;Sidney Yang;L.W. Feng;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2007	Nickel nanocrystals with HfO2 blocking oxide for Nonvolatile Memory Application	F.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou
國立中山大學	2007	Using Double layer CoSi2 Nanocrystals to Improve the Memory Effects of Nonvolatile Memory Devices	Y.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;U.S. Chen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou
國立中山大學	2007	Nonvolatile polycrystalline silicon thin film transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;P.H. Yen;C.F. Weng;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2007	Nickel silicide nanocrystals embedded in SiO2 and HfO2 for Nonvolatile Memory Application	F.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou
國立中山大學	2007	Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles	W.R. Chen;T.C. Chang;J.L. Yeh;S.M. Sze;C.Y. Chang;U.S. Chen
國立中山大學	2007	Formation of Ge nanocrystals using Si10.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application	W.R. Chen;T.C. Chang;Y.T. Hsieh;S.M. Sze;C.Y. Chang
國立中山大學	2007	Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide	Y.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou
國立中山大學	2007	Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer	C.H. Tu;T.C. Chang;P.T. Liu;C.F. Weng;H.C. Liu;L.T. Chang;S.K. Lee;W.R. Chen;S.M. Sze;C.Y. Chang
國立中山大學	2007	Improved Performance of F-Ions-Implanted Poly-Si Thin Film Transistors using Solid Phase Crystallization and Excimer Laser Crystallization	C.H. Tu;T.C. Chang;P.T. Liu;C.Y. Yang;L.W. Feng;C.C. Tsai;L.T. Chang;Y.C. Wu;S.M. Sze;C.Y. Chang
國立中山大學	2007	A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;P.S. Lin;B.H. Tseng;J.H. Shy;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2007	Nonvolatile Si/SiO2/Si3N4/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;J.Y. Chin;P.H. Yeh;L.W. Feng;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2006	A Novel Fabrication of Germanium Nanocrystal Embedded in Silicon-Oxygen-Nitride Layer	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;C.F. Weng;J.H. Shy;B.H. Tseng;T.Y. Tseng;S.M. Sze;C.Y. Chang
國立中山大學	2006	Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;S.M. Sze;C.Y. Chang
國立中山大學	2006	Electrical Enhancement of Solid Phase Crystallized Poly-Si Thin-Film Transistors with Fluorine Ion Implantation	C.H. Tu;T.C. Chang;P.T. Liu;C.H. Chen;C.Y. Yang;Y.C. Wu;H.C. Liu;L.T. Chang;C.C. Tsai;S.M. Sze;C.Y. Chang
國立中山大學	2005	A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide	T.C. Chang;S.T. Yan;Y.T. Chen;P.T. Liu;S.M. Sze

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