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Institution Date Title Author
臺大學術典藏 2019-03-11T08:02:10Z Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF M.-C. Chen;K.-S. Li;M. Tang;S.-J. Huang;J.-W. Lee;S.-N. Liu;M.-J. Xie;C.-C. Cheng;K-Y. Chu;C. Liu;P.-G. Chen;M. H. Lee;M. H.Liao; M. H.Liao; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen
臺大學術典藏 2019-03-11T08:02:10Z Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF M.-C. Chen;K.-S. Li;M. Tang;S.-J. Huang;J.-W. Lee;S.-N. Liu;M.-J. Xie;C.-C. Cheng;K-Y. Chu;C. Liu;P.-G. Chen;M. H. Lee;M. H.Liao; M. H.Liao; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen

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