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Institution Date Title Author
國立交通大學 2017-10-06T06:18:01Z Temperature Dependence of Breakdown Voltage in Silicon Abrupt p-n Junctions 張俊彥; 邱勝雄; 許祿寶; C.Y.Chang; S.S.Chiu; Lu-Pao Hsu
中原大學 2010-03-08 Contact Behavior of Focused Ion Beam-Deposited Pt on p-type Si Nanowire C.Y.Ho; S,S.Chiu; T.C.Kei; K.T.Tsai; Y.A.Dai; J.H.Hsu; M.L.Chang; and J.H.He,
中原大學 2009-07 Contact Behavier of Focused Ion Beam-Deposited Pt on p-type Si Nanowier C. Y. Ho; S. S. Chiu; T. C. Kei; K. T. Tsai; Y. A. Dai; J. H. Hsu; M. L. Chang; J. H. He
中原大學 2009 Characterization of Focused Ion Beam-Deposited Pt and p-type Si Nanowire Contact S. S. Chiu; C. Y. Ho; T. C. Kei; K. T. Tsai; Y. A. Dai; J. H. Hsu; M. L. Chang; J. H. He

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