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Institution Date Title Author
臺大學術典藏 2018-09-10T04:36:14Z Improvements in direct-current characteristics of Al0.45Ga0.55As/GaAs digital graded superlattice-emitter heterojunction bipolar transistors with reduced turn-on voltage by wet-oxidation M.-K. Tsai; Y.-W. Wu; S.-W. Tan; W.-S. Lour; Y. J. Yang; YING-JAY YANG
臺大學術典藏 2018-09-10T04:36:14Z Observation of current gain collapse in large-area HBT with rectangular emitter and etched base M. -K. Tsai; S.-W. Tan; W. S. Lour; Y. J. Yang; YING-JAY YANG
臺大學術典藏 2018-09-10T04:15:52Z Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications M.-K. Tsai; S.-W. Tan; Y.-W. Wu; W.-S. Lour; Y. J. Yang; YING-JAY YANG
臺大學術典藏 2018-09-10T04:15:52Z Investigation of self-aligned p++-GaAs/n-InGaP hetero-junction field-effect transistors W.-S. Lour; M.-K. Tsai; K.-C. Chen; S.-W. Tan; Y.-W. Wu; Y. J. Yang; YING-JAY YANG
臺大學術典藏 2018-09-10T03:51:07Z InGaP/InGaAs dual gate pseudomorphic high electron mobility transistors W.-S. Lour; M.-K. Tsai; K.-C. Chen; Y.-W. Wu; S.-W. Tan; Y. J. Yang; YING-JAY YANG
臺大學術典藏 2018-09-10T03:51:07Z Sub-micron gate by optical lithography using photoresist re-flow and spin-on-glass W.-S. Lour; M.-K. Tsai; K.-C. Chen; Y.-W. Wu; S.-W. Tan; Y. J. Yang; YING-JAY YANG
臺大學術典藏 2018-09-10T03:51:06Z Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing W.-S. Lour; M.-K. Tsai; K.-C. Chen; Y.-W. Wu; S.-W. Tan; Y.-J. Yang; YING-JAY YANG
國立臺灣海洋大學 2007-07 Self-Aligned Enhancement-Mode and Parasite Depletion-Mode Heterojunction Doped-Channel FET for Low Power Supply DCFL Application S. W. Tan; C. W. Liao
國立臺灣海洋大學 2005 Comprehension and modelling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modes H R Chen;W T Chen;M K Hsu;S W Tan;W S Lour
國立臺灣海洋大學 2005 Fringing effects of V-shape gate metal on GaAs/InGa/PInGaAs doped-channel field-effect transistors H R Chen;W T Chen;M K Hsu;S W Tan;W S Lour

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