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Institution Date Title Author
國立臺灣海洋大學 2009-03 GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration W.S. Lour*; J.H. Tsai; H.W. Huang; K.P. Liu; T.H. Huang; K.C. Liang; S.Y. Chiu
國立臺灣海洋大學 2009-03 Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance W.S. Lour; J.H. Tsai; K.P. Liu; K.C. Liang; T.H. Huang; H.W. Huang; S.Y. Chiu
國立臺灣海洋大學 2009-02 GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles S.Y. Chiu;H.W. Huang;K.C. Liang;T.H. Huang; K.P. Liu;J.H. Tsai;W.S. Lour
國立臺灣海洋大學 2009-02 High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2 S.Y. Chiu; H.W. Huang; K.C. Liang; T.H. Huang; K.P. Liu; J.H. Tsai; W.S. Lour
國立臺灣海洋大學 2009 GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles S. Y. Chiu;H. W. Huang;K. C. Liang;T. H. Huang;K. P. Liu;J. H. Tsai;W. S. Lour
國立臺灣海洋大學 2008-10 Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/ Al0.22Ga0.78As double heterojunction high electron mobility transistors M K Hsu; S Y Chiu; C H Wu; W S Lour; D F Guo
朝陽科技大學 2008 Intelligent VoIP system in Ad-Hoc network with embedded pseudo SIP server 廖俊鑑; L.-H. Chang; C.-H. Sung; S.-Y. Chiu; J.-J. Liaw
國立臺灣海洋大學 2007 Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate M K Hsu;H R Chen;S Y Chiu;W T Chen;W C Liu;J H Tasi;W S Lour
國立臺灣海洋大學 2007 Characterization of a self-built field-plate gate on InGaP/InGaAs heterojunction doped-channel field-effect transistors H R Chen;M K Hsu;S Y Chiu;W T Chen;D F Guo;W S Lour
國立臺灣海洋大學 2007 Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate H. R. Chen;M. K. Hsu;S. Y. Chiu;W. T. Chen;G. H. Chen;Y. C. Chang;C. C. Su;W. S. Lour

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