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國立成功大學 |
2013-07-01 |
MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
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Ramvall, P.; Wang, C. H.; Astromskas, G.; Vellianitis, G.; Holland, M.; Droopad, R.; Samuelson, L.; Wernersson, L. E.; Passlack, M.; Diaz, C. H. |
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