|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"samukawa seiji"
Showing items 11-35 of 39 (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page
| 國立交通大學 |
2018-08-21T05:56:52Z |
Modeling and Simulation of Ge/Si-Nanodisk Array for QD-based IB Solar Cells
|
Lee, Ming-Yi; Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:56:25Z |
Design and Simulation of Si/SiC Quantum Dot Superlattice Solar Cells with Al2O3 Passivation Layer
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:54:11Z |
Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n(+) Solar Cells
|
Rahman, Mohammad Maksudur; Tsai, Yi-Chia; Lee, Ming-Yi; Higo, Akio; Li, Yiming; Hoshi, Yusuke; Usami, Noritaka; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:54:04Z |
High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications
|
Lin, Yen-Ku; Noda, Shuichi; Huang, Chia-Ching; Lo, Hsiao-Chieh; Wu, Chia-Hsun; Quang Ho Luc; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:55Z |
Miniband formulation in Ge/Si quantum dot array
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:53:17Z |
Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors
|
Mizubayashi, Wataru; Noda, Shuichi; Ishikawa, Yuki; Nishi, Takashi; Kikuchi, Akio; Ota, Hiroyuki; Su, Ping-Hsun; Li, Yiming; Samukawa, Seiji; Endo, Kazuhiko |
| 國立交通大學 |
2018-08-21T05:52:52Z |
Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide
|
Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:52:50Z |
Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:56:44Z |
Nanometer scale fabrication and optical response of InGaN/GaN quantum disks
|
Lai, Yi-Chun; Higo, Akio; Kiba, Takayuki; Thomas, Cedric; Chen, Shula; Lee, Chang Yong; Tanikawa, Tomoyuki; Kuboya, Shigeyuki; Katayama, Ryuji; Shojiki, Kanako; Takayama, Junichi; Yamashita, Ichiro; Murayama, Akihiro; Chi, Gou-Chung; Yu, Peichen; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:56:22Z |
Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells
|
Rahman, Mohammad Maksudur; Lee, Ming-Yi; Tsai, Yi-Chia; Higo, Akio; Sekhar, Halubai; Igarashi, Makoto; Syazwan, Mohd Erman; Hoshi, Yusuke; Sawano, Kentarou; Usami, Noritaka; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:56:17Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
|
Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:14Z |
Simulation Study of Multilayer Si/SiC Quantum Dot Superlattice for Solar Cell Applications
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Rahman, Mohammad Maksudur; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:56:07Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
|
Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:58Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
|
Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:16Z |
Suspended Diamond-Shaped Nanowire With Four {111} Facets for High-Performance Ge Gate-All-Around FETs
|
Hou, Fu-Ju; Sung, Po-Jung; Hsueh, Fu-Kuo; Wu, Chien-Ting; Lee, Yao-Jen; Li, Yiming; Samukawa, Seiji; Hou, Tuo-Hung |
| 國立交通大學 |
2017-04-21T06:49:59Z |
50% Efficiency Intermediate Band Solar Cell Design Using Highly Periodical Silicon Nanodisk Array
|
Hu, Weiguo; Igarashi, Makoto; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:49:29Z |
Fabrication of InGaN/GaN Nanodisk Structure by using Bio-template and Neutral Beam Etching Process
|
Lai, Yi-Chun; Higo, Akio; Lee, Chang Yong; Thomas, Cedric; Tanikawa, Tomoyuki; Shojiki, Kanako; Kuboya, Shigeyuki; Katayama, Ryuji; Kiba, Takayuki; Yu, Peichen; Yamashita, Ichiro; Murayama, Akihiro; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:58Z |
Miniband formulation in Ge/Si quantum dot array
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Miniband Formulation of Bilayer Type II Ge/Si Quantum Dot Superlattices
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:50Z |
Numerical Simulation of Physical and Electrical Characteristics of Ge/Si Quantum Dots Based Intermediate Band Solar Cell
|
Lee, Ming-Yi; Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:49Z |
Enhancement-mode AlGaN/GaN MIS-HEMTs with Low Threshold Voltage Hysteresis Using Damage-free Neutral Beam Etched Gate Recess
|
Lin, Yen-Ku; Noda, Shuichi; Lee, Ruey-Bor; Huang, Chia-Ching; Quang Ho Luc; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:48:44Z |
Type-II Ge/Si Quantum Dot superlattice for Intermediate-band Solar Cell Applications
|
Hu, Weiguo; Fauzi, Mohd Erman; Igarashi, Makoto; Higo, Akio; Lee, Ming-Yi; Li, Yiming; Usami, Noritaka; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:35Z |
Numerical Simulation of Highly Periodical Ge/Si Quantum Dot Array for Intermediate-Band Solar Cell Applications
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:19Z |
Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology
|
Lee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:48:19Z |
High Performance Poly Si Junctionless Transistors with Sub-5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing for 3D Stacked ICs Applications
|
Lee, Yao-Jen; Cho, Ta-Chun; Sung, Po-Jung; Kao, Kuo-Hsing; Hsueh, Fu-Kuo; Hou, Fu-Ju; Chen, Po-Cheng; Chen, Hsiu-Chih; Wu, Chien-Ting; Hsu, Shu-Han; Chen, Yi-Ju; Huang, Yao-Ming; Hou, Yun-Fang; Huang, Wen-Hsien; Yang, Chih-Chao; Chen, Bo-Yuan; Lin, Kun-Lin; Chen, Min-Cheng; Shen, Chang-Hong; Huang, Guo-Wei; Huang, Kun-Ping; Current, Michael I.; Li, Yiming; Samukawa, Seiji; Wu, Wen-Fa; Shieh, Jia-Min; Chao, Tien-Sheng; Yeh, Wen-Kuan |
Showing items 11-35 of 39 (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page
|
