|
"schurman m"的相關文件
顯示項目 1-8 / 8 (共1頁)
1
每頁顯示[10|25|50]項目
| 國立成功大學 |
1999 |
Linear optical properties of a heavily Mg-doped Al[sub 0.09]Ga[sub 0.91]N epitaxial layer
|
Bergmann, M. J.; Ozgur, U.; Casey, H. C.; Jr., J. F. Muth; Chang, Yun-Chorng; Kolbas, R. M.; Rao, R. A.; Eom, C. B.; Schurman, M. |
| 國立臺灣大學 |
1998-01 |
Photoluminescence and Raman Scattering characterization of GaN, InGaN and AlGaN films using a UV Excitation Raman-Photoluminescence microscope
|
Feng, Z.C.; Schurman, M.; Tran, C.; Salagaj, T.; Karlicek, B.; Ferguson, I.; Stall, R.A.; Dyer, C.D.; Williams, K.P.J.; Pitt, G.D. |
| 國立臺灣大學 |
1997-01 |
How to distinguish the Raman modes of epitaxial GaN with phonon features from sapphire substrate
|
Feng, Z.C.; Schurman, M.; Stall, R.A. |
| 國立臺灣大學 |
1997-01 |
Temperature dependence of the energies and broadening parameters of the interband transitions in Ga0.95Al0.05N
|
Malikova, L.; Huang, Y.-S.; Pollak, F.H.; Feng, Z.C.; Schurman, M.; Tran, C.A.; Salagaj, T.; Stall, R.A. |
| 國立臺灣大學 |
1997-01 |
Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metalorganic chemical vapor deposition
|
Feng, Z.C.; Schurman, M.; Stall, R.A.; Pavloski &, M.; Whitley, A. |
| 國立臺灣大學 |
1996-01 |
The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
|
Thompson, A.G.; Schurman, M.; Feng, Z.C.; Karlicek, R.F.; Salagaj, T.; Tran, C.A.; Stall, R.A. |
| 國立臺灣大學 |
1996-01 |
The wavequide study and the refractive indices of GaN:Mg epitaxial film
|
Zhang, H.Y.; He, X.H.; Shih, Y.H.; Schurman, M.; Feng &, Z.C.; Stall, R.A. |
| 國立臺灣大學 |
1996-01 |
The study of nonlinear optical effects in GaN:Mg epitaxial film
|
Zhang, H.Y.; He, X.H.; Shih, Y.H.; Schurman, M.; Feng &, Z.C.; Stall, R.A. |
顯示項目 1-8 / 8 (共1頁)
1
每頁顯示[10|25|50]項目
|
