|
"sergent am"的相关文件
显示项目 1-11 / 11 (共1页)
1
每页显示[10|25|50]项目
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films
|
Kwo, J; Murphy, DW; Hong, M; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
|
Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Sergent, AM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Passivation of GaAs using gallium-gadolinium oxides
|
Masaitis, RL; Sergent, AM; MINGHWEI HONG; Opila, RL; Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
The (Ga 2 O 3) 1- x (Gd 2 O 3) x, Oxides with x= 0-1.0 for GaAs Passivation
|
Kwo, J; Hong, M; Kortan, AR; Murphy, DW; Mannaerts, JP; Sergent, AM; Wang, YC; Hsieh, KC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:09Z |
Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxides
|
Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Structural properties of Ga2O3 (Gd2O3)-GaAs interfaces
|
Hong, M; Marcus, MA; Kwo, J; Mannaerts, JP; Sergent, AM; Chou, LJ; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Single Crystal Gd 2 0 3 Films Epitaxially Grown on GaAs-A New Dielectric for GaAs Passivation
|
Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wu, MC; Lay, TS; Sergent, AM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
A periodic index separate confinement heterostructure quantum well laser
|
Wu, MC; Chen, YK; Hong, M; Mannaerts, JP; Chin, MA; Sergent, AM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:36Z |
High E gate dielectrics Gd2O3 and Y2O3 for silicon
|
Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM; MINGHWEI HONG; Mannaerts, JP; Kwo, J; Hong, M; Kortan, AR; Queeney, KT; Chabal, YJ |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si
|
Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others; MINGHWEI HONG |
| 臺大學術典藏 |
1997 |
Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
|
Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG |
显示项目 1-11 / 11 (共1页)
1
每页显示[10|25|50]项目
|
