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臺灣機構典藏 TAIR >  依作者瀏覽

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機構 日期 題名 作者
國立臺灣海洋大學 2006-07 Extrinsic base surface-passivated dual-emitter heterojunction phototransistors Wei-Tien Chen;Hon-Rung Chen;Meng-Kai Hsu;Shao-Yen Chiu;Wen-Shiung Lour
國立高雄師範大學 2006 Application of double camel-like gate structures for GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltag Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2006 High-performance InGaP/GaAs pnp d-doped heterojunction bipolar transistor Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Yu-Chi Kang; 蔡榮輝
國立臺灣海洋大學 2006 Comparison of Tuning Performance Characteristics of Dual-Emitter Phototransistor with Biased Emitter and Heterojunction Phototransistor with Biased Base Wei-Tien Chen;Hon-Rung Chen;Meng-Kai Hsu;Shao-Yen Chiu;Wen-Shiung Lour
國立高雄師範大學 2005-07-31 具有寬廣閘極操作電壓異質結構場效電晶體之研究 邱紹諺; Shao-Yen Chiu
國立高雄師範大學 2005 High-performance InP/InGaAs pnp d-doped heterojunction bipolar transistor Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2005 Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2005 Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch Jung-Hui Tsai;Ying-Cheng Chu;Shao-Yen Chiu;King-Poul Zhu;Yu-Jui Chu;Jeng-Shyan Chen; 蔡榮輝
國立臺灣海洋大學 2005 Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu
國立高雄師範大學 2004 A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2004 High performances of InGaP/InGaAs/GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure Jung-Hui Tsai;King-Poul Zhu;Shao-Yen Chiu;Ying-Cheng Chu; 蔡榮輝
國立高雄師範大學 2004 Investigation of InP/InGaAs pnp δ-doped heterojunction bipolar transistor Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2004 High gate turn-on voltages of InGaP/InGaAs camel-gate n- and p-channel pseudomorphic modulation-doped field effect transistors prepared by low-pressure MOCVD Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2004 Investigation of InP/InGaAs heterostructure confinement bipolar transistors grown by low-pressure MOCVD Jung-Hui Tsai;Ying-Cheng Chu;King-Poul Zhu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2004 A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor Jung-Hui Tsai;Shao-Yen Chiu;Ying-Cheng Chu;King-Poul Zhu; 蔡榮輝
國立高雄師範大學 2004 Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor Jung-Hui Tsai;Shao-Yen Chiu;Ying-Cheng Chu;King-Poul Zhu; 蔡榮輝
國立高雄師範大學 2003 /InGaAs/GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2003 Investigation of InP/InGaAs superlattice-emitter heterojunction bipolar transistor (HBT) Jung-Hui Tsai;King-Poul Zhu;Ying-Cheng Chu;Shao-Yen Chiu; 蔡榮輝
國立高雄師範大學 2003 Multiple negative differential resistance of superlattice-emitter resonant tunneling bipolar transistor by high-field domain Jung-Hui Tsai;Ying-Cheng Chu;Shao-Yen Chiu;King-Poul Zhu; 蔡榮輝

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