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机构 日期 题名 作者
臺大學術典藏 2021-01-27T01:38:39Z Interleukin 8 modulates interleukin-1β, interleukin-6 and tumor necrosis factor-α release from normal human mononuclear cells CHIA-LI YU; Sun K.-H.; Shei S.-C.; Tsai C.-Y.; Tsai S.-T.; Wang J.-C.; Liao T.-S.; Lin W.-M.; Chen H.-L.; Yu H.-S.; Han S.-H.
臺大學術典藏 2021-01-27T01:38:38Z Small cell carcinoma of the lung in a patient with rheumatoid arthritis: A case report Liu T.-L.; Tsai C.-Y.; Shei S.-C.; CHIA-LI YU
國立成功大學 2013-10-15 Evolution pathways for the formation of Nano-Cu2ZnSnSe4 absorber materials via elemental sources and isophorondiamine chelation Lee, P. Y.; Shei, S. C.; Chang, S. J.
國立成功大學 2013-01-05 Influence of rinsing temperature on properties of ZnO thin films prepared by SILAR method with propylene glycol Shei, S. C.; Lee, P. Y.
國立成功大學 2013 Improving Light Output Power of AlInGaP-Based LEDs Using GaP Nanorods Prepared by SILAR Method Zeng, X. F.; Shei, S. C.; Chang, S. J.
國立成功大學 2013 SiO2 Nanopillars on Microscale Roughened Surface of GaN-Based Light-Emitting Diodes by SILAR-Based Method Zeng, X. F.; Shei, S. C.; Chang, S. J.
國立成功大學 2013 Enhancement of Output Power for GaN-Based LEDs by Treatments of Ar Plasma on p-GaN Surface Zeng, X. F.; Shei, S. C.; Lo, H. M.; Chang, S. J.
國立成功大學 2012-12 GaN-based light-emitting diodes with a thermally stable mirror structure underneath an insulating SiO2 layer Lin, N. -M.; Shei, S. -C.; Chang, S. -J.
國立成功大學 2012 GaN-Based LEDs with Nano-Patterns by Contact-Transferred and Mask-Embedded Lithography and Cl-2/N-2 Plasma Etching Zeng, X. F.; Shei, S. C.; Chang, S. J.
國立成功大學 2011-09-15 GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth Lin, N. M.; Chang, S. J.; Shei, S. C.; Lai, W. C.; Yang, Y. Y.; Lin, W. C.; Lo, H. M.
國立成功大學 2011-08 GaN-Based LEDs With Air Voids Prepared by Laser Scribing and Chemical Etching Shei, S. C.; Lo, H. M.; Lai, W. C.; Lin, W. C.; Chang, S. J.
國立成功大學 2011-06 AlGaInP-Based LEDs with a p(+)-GaP Window Layer and a Thermally Annealed ITO Contact Lo, H. M.; Shei, S. C.; Zeng, X. F.; Chang, Shoou-Jinn; Lin, Hsieh-Yen
國立成功大學 2011-06 AlGaInP-based LEDs with p+-GaP window layer and a thermally annealed ITO contact Lo,H.-M.;Shei, S.-C.;Zeng, X- F.;Chang, Shoou-Jinng;Lin, Hsieh-Yen
國立成功大學 2011 Postannealing Effect on ITO/p(+)-GaP with a Diffused Layer Lo, H. M.; Shei, S. C.; Zeng, X. F.; Chang, S. J.; Lin, H. Y.
國立成功大學 2011 Postannealing effect on ITO/p+-GaP with a diffused layer Lo, H.-M.;Shei, S.-C.;Zeng, X.-F.;Chang,S.-J.;Lin, H.-Y.
實踐大學 2009 GaN-Based Power Flip-Chip LEDs With Cu Submount Chang, S.J.;Chen, W.S.;Shei, S.C.;Shen, C.F.;Ko, T.K.;Tsai, J.M.;Lai, W.C.;Sheu, J.K.;Lin, A.J.;Hung, S.C.
實踐大學 2009 GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer Weng, W.Y.;Chang, S.J.;Lai, W.C.;Hsueh, T.J.;Shei, S.C.;Zeng, X.F.;Wu, S.L.;Hung, S.C.
國立成功大學 2003 High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu
國立成功大學 2003 MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates Chang, S. J.; Su, Y. K.; Lin, Y. C.; Chuang, R. W.; Chang, C. S.; �Sheu, �Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H.
國立成功大學 2001 Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer �Sheu, �Jinn-Kong; Tsai, J. M.; Shei, S. C.; Lai, W. C.; Wen, T. C.; Kuo, C. H.; Su, Y. K.; Chang, S. J.; Chi, G. C.

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