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Showing items 11-20 of 20 (1 Page(s) Totally)
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| 國立成功大學 |
2011-08 |
GaN-Based LEDs With Air Voids Prepared by Laser Scribing and Chemical Etching
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Shei, S. C.; Lo, H. M.; Lai, W. C.; Lin, W. C.; Chang, S. J. |
| 國立成功大學 |
2011-06 |
AlGaInP-Based LEDs with a p(+)-GaP Window Layer and a Thermally Annealed ITO Contact
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Lo, H. M.; Shei, S. C.; Zeng, X. F.; Chang, Shoou-Jinn; Lin, Hsieh-Yen |
| 國立成功大學 |
2011-06 |
AlGaInP-based LEDs with p+-GaP window layer and a thermally annealed ITO contact
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Lo,H.-M.;Shei, S.-C.;Zeng, X- F.;Chang, Shoou-Jinng;Lin, Hsieh-Yen |
| 國立成功大學 |
2011 |
Postannealing Effect on ITO/p(+)-GaP with a Diffused Layer
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Lo, H. M.; Shei, S. C.; Zeng, X. F.; Chang, S. J.; Lin, H. Y. |
| 國立成功大學 |
2011 |
Postannealing effect on ITO/p+-GaP with a diffused layer
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Lo, H.-M.;Shei, S.-C.;Zeng, X.-F.;Chang,S.-J.;Lin, H.-Y. |
| 實踐大學 |
2009 |
GaN-Based Power Flip-Chip LEDs With Cu Submount
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Chang, S.J.;Chen, W.S.;Shei, S.C.;Shen, C.F.;Ko, T.K.;Tsai, J.M.;Lai, W.C.;Sheu, J.K.;Lin, A.J.;Hung, S.C. |
| 實踐大學 |
2009 |
GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer
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Weng, W.Y.;Chang, S.J.;Lai, W.C.;Hsueh, T.J.;Shei, S.C.;Zeng, X.F.;Wu, S.L.;Hung, S.C. |
| 國立成功大學 |
2003 |
High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode
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Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu |
| 國立成功大學 |
2003 |
MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates
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Chang, S. J.; Su, Y. K.; Lin, Y. C.; Chuang, R. W.; Chang, C. S.; �Sheu, �Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H. |
| 國立成功大學 |
2001 |
Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
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�Sheu, �Jinn-Kong; Tsai, J. M.; Shei, S. C.; Lai, W. C.; Wen, T. C.; Kuo, C. H.; Su, Y. K.; Chang, S. J.; Chi, G. C. |
Showing items 11-20 of 20 (1 Page(s) Totally)
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