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Institution	Date	Title	Author
國立成功大學	2006-01	Rapid thermal annealed InGaN/GaN flip-chip LEDs	Chen, W. S.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Lai, W. C.; Kuo, C. H.; Lin, Y. C.; Chang, C. S.; Ko, T. K.; Hsu, Y. P.; Shen, C. F.
國立成功大學	2005-09-15	AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers	Ko, T. K.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, M. L.; Chang, C. S.; Lin, Y. C.; Shei, Shih-Chang; Sheu, Jinn-Kong; Chen, W. S.; Shen, C. F.
國立成功大學	2005-05	Nitride-based flip-chip ITO LEDs	Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Lee, C. T.; Chen, W. S.; Shen, C. F.; Hsu, Y. P.; Shei, Shih-Chang; Lo, H. M.
國立成功大學	2005-04	Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector	Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, Wei-Shou; Shen, Chien-Fu; Shei, Shih-Chang; Lo, Hsin-Ming
國立成功大學	2005-03-01	AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier	Chen, W. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, R. L.; Kuo, C. H.; Shei, Shih-Chang
國立成功大學	2005-03	ICP etching of sapphire substrates	Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Sheu, Jinn-Kong; Kuo, C. H.; Chang, C. S.; Shei, Shih-Chang
國立成功大學	2004-04	Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact	Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, Ricky Wenkuei; Lai, W. C.; Kuo, C. H.; Hsu, Y. P.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Ke, J. C.; Sheu, Jinn-Kong
國立成功大學	2004-03	Nitride-based LEDs with textured side walls	Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M.
國立成功大學	2003-11	High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact	Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chih, Hungih-Hung; Lai, W. C.; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Tsai, J. M.; Lo, H. M.; Ke, J. C.; Shen, J. K.
國立成功大學	2003-11	Highly reliable nitride-based LEDs with SPS plus ITO upper contacts	Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, R. W.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Lin, H. Y.; Ke, J. C.
國立成功大學	2003-09	Nitride-based LEDs fabricated on patterned sapphire substrates	Chang, Shoou-Jinn; Lin, Y. C.; Su, Yan-Kuin; Chang, C. S.; Wen, Ten-Chin; Shei, Shih-Chang; Ke, J. C.; Kuo, C. W.; Chen, S. C.; Liu, C. H.
國立成功大學	2003-09	High power nitride based light emitting diodes with Ni/ITO p-type contacts	Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M.; Chen, S. C.; Kuo, C. W.
國立成功大學	2003-06	InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts	Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Yi-Chao; Hsu, Yu-Pin; Shei, Shih-Chang; Lo, Hsin-Ming; Ke, Jung-Chin; Chen, Shih-Chih; Liu, Chun-Hsing
國立成功大學	2003-05	InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts	Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, Tzong-Yow; Chang, C. S.; Shei, Shih-Chang; Kuo, C. W.; Chen, S. C.
國立成功大學	2003-05	InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates	Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Lin, Y. C.; Kuo, C. H.; Wu, L. W.; Chen, S. C.
國立成功大學	2003-04	InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering	Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Chen, S. C.; Liu, C. H.; Liaw, U. H.
國立成功大學	2003-02-25	Inductively coupled plasma etching of GaN using Cl-2/He gases	Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Shei, Shih-Chang; Hsu, S. J.
國立成功大學	2003-01-31	Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs	Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Sheu, Jinn-Kong; Lee, C. T.; Wen, Ten-Chin; Wu, L. W.; Kuo, C. H.; Chang, C. S.; Shei, Shih-Chang
國立成功大學	2002-12	Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts	Lin, Yi-Chao; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Chang, C. S.; Shei, Shih-Chang; Hsu, S. J.; Liu, Chun-Hsing; Liaw, U. H.; Chen, S. C.; Huang, Bohr-Ran
國立成功大學	2001-10	Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer	Sheu, Jinn-Kung; Tsai, J. M.; Shei, Shih-Chang; Lai, Wei-Chih; Wen, Ten-Chin; Ko, C. H.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chi, Gou-Chung

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