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"shei shih chang"的相关文件
显示项目 36-60 / 75 (共3页)
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| 國立成功大學 |
2008-07 |
Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-based LEDs
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Jang, Chung-Hsun; Sheu, Jinn-Kong; Tsai, C. M.; Shei, Shih-Chang; Lai, W. C.; Chang, Shoou-Jinn |
| 國立成功大學 |
2007-11 |
Highly reliable high-brightness GaN-based flip chip LEDs
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Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang; Ko, T. K.; Shen, C. F.; Hsu, Y. P.; Chang, C. S.; Tsai, J. M.; Lai, W. C.; Lin, A. J. |
| 國立成功大學 |
2007-07-02 |
Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography
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Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Kuo, C. T.; Ko, T. K.; Shei, Shih-Chang; Sheu, Jinn-Kong |
| 國立成功大學 |
2007-06 |
GaN-based power LEDs with CMOS ESD protection circuits
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Horng, J. J.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang |
| 國立成功大學 |
2007-05-15 |
Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate
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Shen, C. F.; Chang, Shoou-Jinn; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang |
| 國立成功大學 |
2007-05 |
Nitride-based Schottky barrier sensor module with high electrostatic discharge reliability
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Horng, J. J.; Su, Yan-Kuin; Chang, Shoou-Jinn; Ko, T. K.; Shei, Shih-Chang |
| 國立成功大學 |
2007-05 |
Improved reliability and ESD characteristics of flip-chip GaN-based LEDs with internal inverse-parallel protection diodes
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Shei, Shih-Chang; Sheu, Jinn-Kong; Shen, Chien-Fu |
| 國立成功大學 |
2007-04-15 |
AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates
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Chang, Shoou-Jinn; Ko, T. K.; Sheu, Jinn-Kong; Shei, Shih-Chang; Lai, W. C.; Chiou, Y. Z.; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Shen, C. F. |
| 國立成功大學 |
2007 |
Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes
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Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Yu, Kuo-Hui; Shei, Shih-Chang; Chiou, Y. Z. |
| 國立成功大學 |
2006-11 |
Nitride-based light emitting diodes with textured sidewalls and pillar waveguides
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Shen, C. F.; Chang, Shoou-Jinn; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang; Chen, W. S.; Lee, Ching-Ting; Chang, C. S.; Chiou, Yu-Zung |
| 國立成功大學 |
2006-09 |
Highly reliable nitride-based LEDs with internal ESD protection diodes
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Chang, Shoou-Jinn; Shen, C. F.; Shei, Shih-Chang; Chuang, R. W.; Chang, C. S.; Chen, W. S.; Ko, T. K.; Sheu, Jinn-Kong |
| 國立成功大學 |
2006-08 |
Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors
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Chang, Shoou-Jinn; Chen, W. S.; Lin, Y. C.; Chang, C. S.; Ko, T. K.; Hsu, Y. P.; Shen, C. F.; Tsai, J. M.; Shei, Shih-Chang |
| 國立成功大學 |
2006-08 |
Nitride-based flip-chip p-i-n photodiodes
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Ko, T. K.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S.; Shen, C. F. |
| 國立成功大學 |
2006-08 |
Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors
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Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Wang, C. K.; Sheu, Jinn-Kong; Lai, W. C. |
| 國立成功大學 |
2006-08 |
AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers
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Ko, T. K.; Chang, Shoou-Jinn; Sheu, Jinn-Kong; Shei, Shih-Chang; Chiou, Yu-Zung; Lee, M. L.; Shen, C. F.; Chang, S. P.; Lin, K. W. |
| 國立成功大學 |
2006-08 |
InGaN p-i-n ultraviolet - A band-pass photodetectors
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Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Chiou, Yu-Zung; Lin, R. M.; Chen, W. S.; Shen, C. F.; Chang, C. S.; Lin, K. W. |
| 國立成功大學 |
2006-06 |
High efficiency and improved ESD characteristics of GaN-Based LEDs with naturally textured surface grown by MOCVD
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Tsai, C. M.; Sheu, Jinn-Kong; Wang, P. T.; Lai, W. C.; Shei, Shih-Chang; Chang, Shoou-Jinn; Kuo, C. H.; Kuo, C. W.; Su, Yan-Kuin |
| 國立成功大學 |
2006-04 |
Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes
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Shei, Shih-Chang; Sheu, Jinn-Kong; Tsai, Chi-Ming; Lai, Wei-Chi; Lee, Ming-Lun; Kuo, Cheng-Huang |
| 國立成功大學 |
2006-04 |
GaN-based p-i-n sensors with ITO contacts
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Chang, Shoou-Jinn; Ko, T. K.; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S. |
| 國立成功大學 |
2006-03-13 |
InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface
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Sheu, Jinn-Kong; Tsai, C. M.; Lee, M. L.; Shei, Shih-Chang; Lai, W. C. |
| 國立成功大學 |
2006-01 |
Rapid thermal annealed InGaN/GaN flip-chip LEDs
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Chen, W. S.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Lai, W. C.; Kuo, C. H.; Lin, Y. C.; Chang, C. S.; Ko, T. K.; Hsu, Y. P.; Shen, C. F. |
| 國立成功大學 |
2005-09-15 |
AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers
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Ko, T. K.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, M. L.; Chang, C. S.; Lin, Y. C.; Shei, Shih-Chang; Sheu, Jinn-Kong; Chen, W. S.; Shen, C. F. |
| 國立成功大學 |
2005-05 |
Nitride-based flip-chip ITO LEDs
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Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Lee, C. T.; Chen, W. S.; Shen, C. F.; Hsu, Y. P.; Shei, Shih-Chang; Lo, H. M. |
| 國立成功大學 |
2005-04 |
Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector
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Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, Wei-Shou; Shen, Chien-Fu; Shei, Shih-Chang; Lo, Hsin-Ming |
| 國立成功大學 |
2005-03-01 |
AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier
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Chen, W. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, R. L.; Kuo, C. H.; Shei, Shih-Chang |
显示项目 36-60 / 75 (共3页)
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每页显示[10|25|50]项目
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