|
"shei shih chang"的相關文件
顯示項目 21-45 / 75 (共3頁)
1 2 3 > >>
每頁顯示[10|25|50]項目
| 國立成功大學 |
2012-08 |
Investigation of Ni/Ag contact to p-GaN with an O2 plasma treatment and its application to GaN-based LEDs
|
Lin, Nan-Ming; Shei, Shih-Chang; Chang, Shoou-Jinn |
| 國立成功大學 |
2012-05-15 |
GaN-Based LEDs With Omnidirectional Metal Underneath an Insulating SiO2 Layer
|
Lin, Nan-Ming; Shei, Shih-Chang; Chang, Shoou-Jinn; Zeng, Xu-Feng |
| 國立成功大學 |
2011-04-01 |
Nitride-Based LEDs With High-Reflectance and Wide-Angle Ag Mirror+SiO(2)/TiO(2) DBR Backside Reflector
|
Lin, Nan-Ming; Shei, Shih-Chang; Chang, Shoou-Jinn |
| 國立成功大學 |
2011-04-01 |
Nitride-based LEDs with high-reflectance and wide-angle Ag mirror+SiO2/TiO2 DBR backside reflector
|
Lin, Nan-Ming;Shei,Shih-Chang;Chang, Shoou-Jinn |
| 國立成功大學 |
2011 |
Rinsing Effects on Successive Ionic Layer Adsorption and Reaction Method for Deposition of ZnO Thin Films
|
Shei, Shih-Chang; Chang, Shoou-Jinn; Lee, Pay-Yu |
| 國立成功大學 |
2009-11-15 |
GaN-Based LEDs With GaN mu-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads
|
Peng, Li-Chi; Lai, Wei-Chih; Chang, Ming-Nan; Shei, Shih-Chang; Sheu, Jinn-Kong |
| 國立成功大學 |
2009-10 |
The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads
|
Shei, Shih-Chang; Lai, Wei-Chih; Sheu, Jinn-Kong; Hung, I-Hsiu; Chang, Shoou-Jinn |
| 國立成功大學 |
2009-09 |
GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars
|
Lai, Wei-Chihh; Chen, P. H.; Chang, L. C.; Kuo, Cheng-Huang; Sheu, Jinn-Kong; Tun, Chun-Ju; Shei, Shih-Chang |
| 國立成功大學 |
2009-07 |
GaN-Based Power Flip-Chip LEDs With Cu Submount
|
Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang; Shen, C. F.; Ko, T. K.; Tsai, J. M.; Lai, W. C.; Sheu, Jinn-Kong; Lin, A. J.; Hung, S. C. |
| 國立成功大學 |
2009-06-15 |
High-Brightness InGaN-GaN Power Flip-Chip LEDs
|
Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang; Kuo, C. T.; Ko, T. K.; Shen, C. F.; Tsai, J. M.; Lai, Wei-Chi; Sheu, Jinn-Kong; Lin, A. J. |
| 國立成功大學 |
2009-04-15 |
GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer
|
Weng, W. Y.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L.; Hung, S. C. |
| 國立成功大學 |
2009 |
GaN MSM Photodetectors with a Semi-Insulating AlInN Cap Layer and Sputtered ITO Transparent Electrodes
|
Weng, W. Y.; Chuang, Ricky W.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L. |
| 國立成功大學 |
2009 |
GaN-Based LED with Embedded Microlens-like Structure
|
Lai, Wei-Chih; Peng, Li-Chi; Chang, Ming-Nan; Shei, Shih-Chang; Hsu, Y. P.; Sheu, Jinn-Kong |
| 國立成功大學 |
2008-09-08 |
Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads
|
Sheu, Jinn-Kong; Hung, I-Hsiu; Lai, Wei-Chih; Shei, Shih-Chang; Lee, M. L. |
| 國立成功大學 |
2008-09 |
Nitride-Based LEDs With a Hybrid Al Mirror +TiO2/SiO2 DBR Backside Reflector
|
Chang, Shoou-Jinn; Shen, C. F.; Hsieh, M. H.; Kuo, C. T.; Ko, T. K.; Chen, W. S.; Shei, Shih-Chang |
| 國立成功大學 |
2008-07 |
Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-based LEDs
|
Jang, Chung-Hsun; Sheu, Jinn-Kong; Tsai, C. M.; Shei, Shih-Chang; Lai, W. C.; Chang, Shoou-Jinn |
| 國立成功大學 |
2007-11 |
Highly reliable high-brightness GaN-based flip chip LEDs
|
Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang; Ko, T. K.; Shen, C. F.; Hsu, Y. P.; Chang, C. S.; Tsai, J. M.; Lai, W. C.; Lin, A. J. |
| 國立成功大學 |
2007-07-02 |
Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography
|
Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Kuo, C. T.; Ko, T. K.; Shei, Shih-Chang; Sheu, Jinn-Kong |
| 國立成功大學 |
2007-06 |
GaN-based power LEDs with CMOS ESD protection circuits
|
Horng, J. J.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang |
| 國立成功大學 |
2007-05-15 |
Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate
|
Shen, C. F.; Chang, Shoou-Jinn; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang |
| 國立成功大學 |
2007-05 |
Nitride-based Schottky barrier sensor module with high electrostatic discharge reliability
|
Horng, J. J.; Su, Yan-Kuin; Chang, Shoou-Jinn; Ko, T. K.; Shei, Shih-Chang |
| 國立成功大學 |
2007-05 |
Improved reliability and ESD characteristics of flip-chip GaN-based LEDs with internal inverse-parallel protection diodes
|
Shei, Shih-Chang; Sheu, Jinn-Kong; Shen, Chien-Fu |
| 國立成功大學 |
2007-04-15 |
AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates
|
Chang, Shoou-Jinn; Ko, T. K.; Sheu, Jinn-Kong; Shei, Shih-Chang; Lai, W. C.; Chiou, Y. Z.; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Shen, C. F. |
| 國立成功大學 |
2007 |
Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes
|
Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Yu, Kuo-Hui; Shei, Shih-Chang; Chiou, Y. Z. |
| 國立成功大學 |
2006-11 |
Nitride-based light emitting diodes with textured sidewalls and pillar waveguides
|
Shen, C. F.; Chang, Shoou-Jinn; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang; Chen, W. S.; Lee, Ching-Ting; Chang, C. S.; Chiou, Yu-Zung |
顯示項目 21-45 / 75 (共3頁)
1 2 3 > >>
每頁顯示[10|25|50]項目
|
