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Showing items 51-75 of 75 (3 Page(s) Totally)
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| 國立成功大學 |
2006-08 |
InGaN p-i-n ultraviolet - A band-pass photodetectors
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Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Chiou, Yu-Zung; Lin, R. M.; Chen, W. S.; Shen, C. F.; Chang, C. S.; Lin, K. W. |
| 國立成功大學 |
2006-06 |
High efficiency and improved ESD characteristics of GaN-Based LEDs with naturally textured surface grown by MOCVD
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Tsai, C. M.; Sheu, Jinn-Kong; Wang, P. T.; Lai, W. C.; Shei, Shih-Chang; Chang, Shoou-Jinn; Kuo, C. H.; Kuo, C. W.; Su, Yan-Kuin |
| 國立成功大學 |
2006-04 |
Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes
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Shei, Shih-Chang; Sheu, Jinn-Kong; Tsai, Chi-Ming; Lai, Wei-Chi; Lee, Ming-Lun; Kuo, Cheng-Huang |
| 國立成功大學 |
2006-04 |
GaN-based p-i-n sensors with ITO contacts
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Chang, Shoou-Jinn; Ko, T. K.; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S. |
| 國立成功大學 |
2006-03-13 |
InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface
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Sheu, Jinn-Kong; Tsai, C. M.; Lee, M. L.; Shei, Shih-Chang; Lai, W. C. |
| 國立成功大學 |
2006-01 |
Rapid thermal annealed InGaN/GaN flip-chip LEDs
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Chen, W. S.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Lai, W. C.; Kuo, C. H.; Lin, Y. C.; Chang, C. S.; Ko, T. K.; Hsu, Y. P.; Shen, C. F. |
| 國立成功大學 |
2005-09-15 |
AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers
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Ko, T. K.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, M. L.; Chang, C. S.; Lin, Y. C.; Shei, Shih-Chang; Sheu, Jinn-Kong; Chen, W. S.; Shen, C. F. |
| 國立成功大學 |
2005-05 |
Nitride-based flip-chip ITO LEDs
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Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Lee, C. T.; Chen, W. S.; Shen, C. F.; Hsu, Y. P.; Shei, Shih-Chang; Lo, H. M. |
| 國立成功大學 |
2005-04 |
Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector
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Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, Wei-Shou; Shen, Chien-Fu; Shei, Shih-Chang; Lo, Hsin-Ming |
| 國立成功大學 |
2005-03-01 |
AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier
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Chen, W. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, R. L.; Kuo, C. H.; Shei, Shih-Chang |
| 國立成功大學 |
2005-03 |
ICP etching of sapphire substrates
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Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Sheu, Jinn-Kong; Kuo, C. H.; Chang, C. S.; Shei, Shih-Chang |
| 國立成功大學 |
2004-04 |
Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact
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Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, Ricky Wenkuei; Lai, W. C.; Kuo, C. H.; Hsu, Y. P.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Ke, J. C.; Sheu, Jinn-Kong |
| 國立成功大學 |
2004-03 |
Nitride-based LEDs with textured side walls
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M. |
| 國立成功大學 |
2003-11 |
High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chih, Hungih-Hung; Lai, W. C.; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Tsai, J. M.; Lo, H. M.; Ke, J. C.; Shen, J. K. |
| 國立成功大學 |
2003-11 |
Highly reliable nitride-based LEDs with SPS plus ITO upper contacts
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Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, R. W.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Lin, H. Y.; Ke, J. C. |
| 國立成功大學 |
2003-09 |
Nitride-based LEDs fabricated on patterned sapphire substrates
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Chang, Shoou-Jinn; Lin, Y. C.; Su, Yan-Kuin; Chang, C. S.; Wen, Ten-Chin; Shei, Shih-Chang; Ke, J. C.; Kuo, C. W.; Chen, S. C.; Liu, C. H. |
| 國立成功大學 |
2003-09 |
High power nitride based light emitting diodes with Ni/ITO p-type contacts
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Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M.; Chen, S. C.; Kuo, C. W. |
| 國立成功大學 |
2003-06 |
InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts
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Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Yi-Chao; Hsu, Yu-Pin; Shei, Shih-Chang; Lo, Hsin-Ming; Ke, Jung-Chin; Chen, Shih-Chih; Liu, Chun-Hsing |
| 國立成功大學 |
2003-05 |
InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
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Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, Tzong-Yow; Chang, C. S.; Shei, Shih-Chang; Kuo, C. W.; Chen, S. C. |
| 國立成功大學 |
2003-05 |
InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates
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Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Lin, Y. C.; Kuo, C. H.; Wu, L. W.; Chen, S. C. |
| 國立成功大學 |
2003-04 |
InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Chen, S. C.; Liu, C. H.; Liaw, U. H. |
| 國立成功大學 |
2003-02-25 |
Inductively coupled plasma etching of GaN using Cl-2/He gases
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Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Shei, Shih-Chang; Hsu, S. J. |
| 國立成功大學 |
2003-01-31 |
Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs
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Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Sheu, Jinn-Kong; Lee, C. T.; Wen, Ten-Chin; Wu, L. W.; Kuo, C. H.; Chang, C. S.; Shei, Shih-Chang |
| 國立成功大學 |
2002-12 |
Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts
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Lin, Yi-Chao; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Chang, C. S.; Shei, Shih-Chang; Hsu, S. J.; Liu, Chun-Hsing; Liaw, U. H.; Chen, S. C.; Huang, Bohr-Ran |
| 國立成功大學 |
2001-10 |
Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer
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Sheu, Jinn-Kung; Tsai, J. M.; Shei, Shih-Chang; Lai, Wei-Chih; Wen, Ten-Chin; Ko, C. H.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chi, Gou-Chung |
Showing items 51-75 of 75 (3 Page(s) Totally)
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