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Showing items 16-25 of 27  (3 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T06:58:06Z Enhanced photoluminescence excitation in surface plasmon coupling with an InGaN/GaN quantum well Lu, Y.-C.; Chen, C.-Y.; Shen, K.-C.; Yeh, D.-M.; Tang, T.-Y.; Yang, C.C.; CHIH-CHUNG YANG
臺大學術典藏 2018-09-10T06:58:05Z GaN defect photonic crystal membrane laser Lin, C.-H.; Shen, K.-C.; Yeh, D.-M.; Chen, G.-Y.; Mu, Z.-D.; Peng, L.-H.; Yang, C.C.; CHIH-CHUNG YANG
臺大學術典藏 2018-09-10T06:25:11Z Can we fabricate efficient white-light InGaN/GaN quantum-well light-emitting diode without using phosphors? Huang, C.-F.; Yeh, D.-M.; Chen, C.-Y.; Lu, C.-F.; Tang, T.-Y.; Huang, J.-J.; Lu, Y.-C.; Chen, Y.-S.; Shiao, W.-Y.; Shen, K.-C.; Li, Y.-L.; Huang, J.J.; Yang, C.C.; CHIH-CHUNG YANG et al.
臺大學術典藏 2018-09-10T06:25:10Z Combination of Nitride semiconductor nanostructures and nano-photonics for efficient solid-state lighting Huang, C.-F.; Chen, G.-Y.; Yeh, D.-M.; Tang, T.-Y.; Lu, Y.-C.; Lu, C.-F.; Chen, Y.-S.; Shiao, W.-Y.; Shen, K.-C.; Huang, J.-J.; Yang, C.C.; CHIH-CHUNG YANG et al.
臺大學術典藏 2018-09-10T06:25:07Z Surface plasmon leakage in its coupling with an InGaN/GaN quantum well through an ohmic contact Yeh, D.-M.; Huang, C.-F.; Lu, Y.-C.; Chen, C.-Y.; Tang, T.-Y.; Huang, J.-J.; Shen, K.-C.; Yang, Y.-J.; Yang, C.C.; CHIH-CHUNG YANG
臺大學術典藏 2018-09-10T06:25:07Z Surface plasmon coupling with an InGaN/GaN quantum well for enhancing light emission efficiency Lu, Y.-C.; Chen, C.-Y.; Yeh, D.-M.; Shen, K.-C.; Huang, C.-F.; Yang, C.C.; CHIH-CHUNG YANG
臺大學術典藏 2018-09-10T06:25:06Z Surface plasmon leakage in its coupling with an InGaNGaN quantum well through an Ohmic contact Yeh, D.-M.; Huang, C.-F.; Lu, Y.-C.; Chen, C.-Y.; Tang, T.-Y.; Huang, J.-J.; Shen, K.-C.; Yang, Y.-J.; Yang, C.C.; CHIH-CHUNG YANG
大葉大學 2011-12-15 Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency and device performance Huang, S.C.;Shen, K.C.;Wuu, Dong-Sing;Tu, P.M.;Kuo, H.C.;Tu, C.C.;Horng, R.H.
國立臺灣科技大學 2009 A 5.2 GHz low power VCO in 0.18 μm CMOS process Jang S.-L.; Shen K.-C.; Liu C.-C.
國立臺灣科技大學 2009 A six-phase divide-by-3 injection locked frequency divider in SiGe BiCMOS technology Jang S.-L.; Shen K.-C.; Chang C.-W.; Juang M.-H.

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