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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T15:23:22Z |
Junctionless Gate-all-around pFETs on Si with In-situ doped Ge channel
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Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Huang, C.-H.; Chen, Y.-S.; Shieh, T.-C.; Liu, C.W.; CHEE-WEE LIU; Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Huang, C.-H.;Chen, Y.-S.;Shieh, T.-C.;Liu, C.W.; Wong, I.-H. |
| 臺大學術典藏 |
2018-09-10T15:23:22Z |
Junctionless Gate-all-around pFETs on Si with In-situ doped Ge channel
|
Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Huang, C.-H.; Chen, Y.-S.; Shieh, T.-C.; Liu, C.W.; CHEE-WEE LIU; Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Huang, C.-H.;Chen, Y.-S.;Shieh, T.-C.;Liu, C.W.; Wong, I.-H. |
| 臺大學術典藏 |
2018-09-10T15:23:22Z |
In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement
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CHEE-WEE LIU; Liu, C.W.; Lan, H.-S.; Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Chen, Y.-S.;Shieh, T.-C.;Lin, T.-Y.;Lan, H.-S.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y. |
| 臺大學術典藏 |
2018-09-10T15:23:22Z |
In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement
|
CHEE-WEE LIU; Liu, C.W.; Lan, H.-S.; Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Chen, Y.-S.;Shieh, T.-C.;Lin, T.-Y.;Lan, H.-S.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y. |
Showing items 1-4 of 4 (1 Page(s) Totally)
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