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Taiwan Academic Institutional Repository >
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"shih chih cheng"
Showing items 11-20 of 42 (5 Page(s) Totally) << < 1 2 3 4 5 > >> View [10|25|50] records per page
| 國立交通大學 |
2018-08-21T05:54:30Z |
Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
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Wu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:55Z |
Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors
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Chien, Yu-Chieh; Chang, Ting-Chang; Chiang, Hsiao-Cheng; Chen, Hua-Mao; Tsao, Yu-Ching; Shih, Chih-Cheng; Chen, Bo-Wei; Liao, Po-Yung; Chu, Ting-Yang; Yang, Yi-Chieh; Hung, Yu-Ju; Tsai, Tsung-Ming; Chang, Kuan-Chang |
| 國立交通大學 |
2018-08-21T05:53:52Z |
Performance improvement after nitridation treatment in HfO2-based resistance random-access memory
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Wang, Ming-Hui; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Wu, Pei-Yu; Huang, Hui-Chun; Chen, Wen-Chung; Huang, Jen-Wei; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:49Z |
Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory
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Zheng, Hao-Xuan; Chang, Ting-Chang; Xue, Kan-Hao; Su, Yu-Ting; Wu, Cheng-Hsien; Shih, Chih-Cheng; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Chen, Chun-Kuei; Miao, Xiang-Shui; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:02Z |
Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer Structure
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Tseng, Yi-Ting; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Huang, Hui-Chun; Yang, Cheng-Chi; Lin, Chih-Yang; Wu, Cheng-Hsien; Zheng, Hao-Xuan; Zhang, Shengdong; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:27Z |
Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode
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Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Shih, Chih-Cheng; Lin, Chih-Yang; Chen, Po-Hsun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:21Z |
Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Cheng-Chi; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Min-Chen; Wang, Ruey-Chi; Leu, Ching-Chich; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-12 |
Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Cheng-Chi; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Min-Chen; Wang, Ruey-Chi; Leu, Ching-Chich; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-12 |
Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode
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Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Shih, Chih-Cheng; Lin, Chih-Yang; Chen, Po-Hsun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M. |
| 國立成功大學 |
2016-10 |
Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory
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Shih, Chih-Cheng; Chen, Wen-Jen; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Tseng, Yi-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Chen, Jung-Hui; Zheng, Jin-Cheng; Sze, Simon M. |
Showing items 11-20 of 42 (5 Page(s) Totally) << < 1 2 3 4 5 > >> View [10|25|50] records per page
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