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| 國立交通大學 |
2014-12-08T15:48:43Z |
Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing
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Chen, DR; Luo, JS; Lin, WT; Chang, CY; Shih, PS |
| 國立交通大學 |
2014-12-08T15:46:32Z |
Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C
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Luo, JS; Lin, WT; Chang, CY; Shih, PS |
| 國立交通大學 |
2014-12-08T15:46:22Z |
Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealing
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Luo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM; Chang, TC |
| 國立交通大學 |
2014-12-08T15:46:21Z |
Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealing
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Luo, JS; Hang, YL; Lin, WT; Chang, CY; Shih, PS |
| 國立交通大學 |
2014-12-08T15:46:20Z |
A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition
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Shih, PS; Chang, CY; Chang, TC; Huang, TY; Peng, DZ; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:46:02Z |
Effects of Mo-free C40Ti(Si1-xGex)(2) precursors and the thickness of an interposed Mo layer on the enhanced formation of C54Ti(Si1-xGex)(2)
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Luo, JS; Huang, JC; Lin, WT; Chang, CY; Shih, PS |
| 國立交通大學 |
2014-12-08T15:45:53Z |
Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy
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Luo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM |
| 國立交通大學 |
2014-12-08T15:45:46Z |
The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
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Chang, CY; Lee, YS; Huang, TY; Shih, PS; Lin, CW |
| 國立交通大學 |
2014-12-08T15:45:19Z |
Improvements of amorphous-silicon inverted-staggered thin-film transistors using high-temperature-deposited Al gate with chemical mechanical polishing
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Shih, PS; Chang, TC; Liang, CY; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:14Z |
Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealing
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Luo, JS; Lin, WT; Chang, CY; Shih, PS |
Showing items 1-10 of 22 (3 Page(s) Totally)
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