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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立臺灣大學 |
1993-10 |
An analytical back gate bias dependent threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices
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Kuo, J.B.; Tang, M.C.; Sim, J.H. |
| 臺大學術典藏 |
1993-10 |
An analytical back gate bias dependent threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices
|
Kuo, J.B.; Tang, M.C.; Sim, J.H.; Kuo, J.B.; Tang, M.C.; Sim, J.H.; KuoJB |
| 國立臺灣大學 |
1993-05 |
Accumulation-type vs. inversion-type of an ultra-thin SIO PMOS device operating at 300 K and 77 K: subthreshold behavior and pull-up switching performance of a CMOS inverter
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Kuo, J.B.; Sim, J.H. |
| 臺大學術典藏 |
1993-05 |
Accumulation-type vs. inversion-type of an ultra-thin SIO PMOS device operating at 300 K and 77 K: subthreshold behavior and pull-up switching performance of a CMOS inverter
|
Kuo, J.B.; Sim, J.H.; Kuo, J.B.; Sim, J.H.; KuoJB |
| 國立臺灣大學 |
1992-10 |
Delayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperature
|
Kuo, J.B.; Sim, J.H. |
| 臺大學術典藏 |
1992-10 |
Delayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperature
|
Kuo, J.B.; Sim, J.H.; Kuo, J.B.; Sim, J.H.; KuoJB |
Showing items 1-6 of 6 (1 Page(s) Totally)
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