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Showing items 1-16 of 16 (1 Page(s) Totally)
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| 元智大學 |
Sep-19 |
Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
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李清庭; Anandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Chang, Edward Yi |
| 元智大學 |
Nov-21 |
Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD
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李清庭; Anandan, Deepak; Yu, Hung Wei; Chang, Edward Yi; Singh, Sankalp Kumar; Nagarajan, Venkatesan; Dee, Chang Fu; Ueda, Daisuke |
| 元智大學 |
Jan-19 |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
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李清庭; Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Chang, Edward Yi |
| 元智大學 |
Jan-19 |
Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition
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李清庭; Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2020-10-05T01:59:50Z |
Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement
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Nagarajan, Venkatesan; Chen, Kun-Ming; Chen, Bo-Yuan; Huang, Guo-Wei; Chuang, Chia-Wei; Lin, Chuang-Ju; Anandan, Deepak; Wu, Chai-Hsun; Han, Ping-Cheng; Singh, Sankalp Kumar; Tien-Tung Luong; Chang, Edward Yi |
| 國立交通大學 |
2020-07-01T05:22:04Z |
Low-Frequency Noise Characterization of AlGaN & x002F;GaN HEMTs and MIS-HEMTs Under UV Illumination
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Nagarajan, Venkatesan; Chen, Kun-Ming; Lin, Hsin-Yi; Hu, Hsin-Hui; Huang, Guo-Wei; Lin, Chuang-Ju; Chen, Bo-Yuan; Anandan, Deepak; Singh, Sankalp Kumar; Wu, Chai-Hsun; Chang, Edward Yi |
| 國立交通大學 |
2019-10-05T00:08:44Z |
Simulation study of gated nanowire InAs/Si Hetero p channel TFET and effects of interface trap
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Joseph, H. Bijo; Singh, Sankalp Kumar; Hariharan, R. M.; Tarauni, Yusuf; Thiruvadigal, D. John |
| 國立交通大學 |
2019-08-02T02:18:33Z |
A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects
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Nagarajan, Venkatesan; Chen, Kun-Ming; Wang, Huan-Chung; Singh, Sankalp Kumar; Anandan, Deepak; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2019-08-02T02:15:30Z |
Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance
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Singh, Sankalp Kumar; Kakkerla, Ramesh Kumar; Joseph, H. Bijo; Gupta, Ankur; Anandan, Deepak; Nagarajan, Venkatesan; Yu, Hung Wei; Thiruvadigal, D. John; Chang, Edward Yi |
| 國立交通大學 |
2019-08-02T02:15:28Z |
Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
|
Anandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:04:29Z |
Growth and Crystal Structure Investigation of Self-catalyst InAs/GaSb Heterostructure Nanowires on Si substrate
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Kakkerla, Ramesh Kumar; Hsiao, Chih-Jen; Anandan, Deepak; Singh, Sankalp Kumar; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:07Z |
Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition
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Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Lee, Ching-Ting; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:47Z |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
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Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:41Z |
Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si Substrate
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Kakkerla, Ramesh Kumar; Hsiao, Chih-Jen; Anandan, Deepak; Singh, Sankalp Kumar; Chang, Sheng-Po; Pande, Krishna P.; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:51Z |
Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping
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Joseph, H. Bijo; Singh, Sankalp Kumar; Hariharan, R. M.; Priya, P. Aruna; Kumar, N. Mohan; Thiruvadigal, D. John |
| 國立交通大學 |
2018-08-21T05:53:31Z |
Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD
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Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi |
Showing items 1-16 of 16 (1 Page(s) Totally)
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