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Showing items 1-25 of 47 (2 Page(s) Totally)
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| 臺大學術典藏 |
2020-06-16T06:33:13Z |
Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915))
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Amour, A.St.;Liu, C.W.;Sturm, J.C.;Lacroix, Y.;Thewalt, M.L.W.; Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2020-06-11T06:15:55Z |
Electronic Materials
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Sturm, J.C.;Rim, K.;Harris, J.S.;Wu, C.-C.; Sturm, J.C.; Rim, K.; Harris, J.S.; Wu, C.-C.; CHUNG-CHIH WU |
| 臺大學術典藏 |
2020-04-28T07:14:44Z |
Reliability of active-matrix organic light-emitting-diode arrays with amorphous silicon thin-film transistor backplanes on clear plastic
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JIAN-ZHANG CHEN; Hack, M.; Rajan, K.; Sturm, J.C.; Hekmatshoar, B.; Kattamis, A.Z.; Cherenack, K.H.; Long, K.; Chen, J.-Z.; Wagner, S. |
| 臺大學術典藏 |
2018-09-10T14:58:05Z |
Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer
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Huang, C.-T.;Li, J.-Y.;Chou, K.S.;Sturm, J.C.; Huang, C.-T.; Li, J.-Y.; Chou, K.S.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:17Z |
Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition
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Li, J.-Y.;Huang, C.-T.;Rokhinson, L.P.;Sturm, J.C.; Li, J.-Y.; Huang, C.-T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:17Z |
Implant isolation of silicon two-dimensional electron gases at 4.2 K
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Huang, C.-T.;Li, J.-Y.;Sturm, J.C.; Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:16Z |
The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases
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Li, J.-Y.;Sturm, J.C.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:16Z |
Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers
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JIUN-YUN LI; Sturm, J.C.; Li, J.-Y.; Huang, C.-T.; Huang, C.-T.;Li, J.-Y.;Sturm, J.C. |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition
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Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation
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Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD
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Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating
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Li, J.Y.; Huang, C.T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T07:37:20Z |
Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition
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Liu, C.W.; Tseng, Y.D.; Chern, M.Y.; Chang, C.L.; Sturm, J.C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T07:37:20Z |
Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD
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Li, J.-Y.;Sturm, J.C.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T07:29:05Z |
Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition
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Liu, C.W.; Tseng, Y.D.; Chern, M.Y.; Chang, C.L.; Sturm, J.C.; MING-YAU CHERN |
| 臺大學術典藏 |
2018-09-10T07:03:20Z |
Fracture mechanisms of sink thin-films on compliant substrates
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Kattamis, A.Z.; Cherenack, K.H.; Cheng, I.C.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T06:32:07Z |
Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices
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Wu, C.C.; Wu, C.I.; Sturm, J.C.; Kahn, A.; CHIH-I WU |
| 臺大學術典藏 |
2018-09-10T06:31:22Z |
Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics
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Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T06:31:22Z |
Growth of β-SiC on Si and poly-Si on β-SiC by rapid thermal chemical vapor deposition
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Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T06:30:23Z |
Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displays
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Cheng, I.-C.; Long, K.; Hekmatshoar, B.; Cherenack, K.H.; Wagner, S.; Sturm, J.C.; Venugopal, S.M.; Loy, D.E.; O'Rourke, S.M.; Allee, D.R.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:58:51Z |
Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates
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Liu, C.W.;St. Amour, A.;Sturm, J.C.;Lacroix, Y.R.J.;Thewalt, M.L.W.;Magee, C.W.;Eaglesham, D.; Liu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:58:01Z |
Mechanics of thin-film transistors and solar cells on flexible substrates
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Gleskova, H.; Cheng, I.-C.; Wagner, S.; Sturm, J.C.; Suo, Z.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:58:01Z |
High mobility nanocrystalline silicon transistors on clear plastic substrates
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Kattamis, A.Z.; Holmes, R.J.; Cheng, I.-C.; Long, K.; Sturm, J.C.; Forrest, S.R.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:58:00Z |
Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C
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Long, K.; Kattamis, A.Z.; Cheng, I.-C.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:58:00Z |
SiNx barrier layers deposited at 250°C on a clear polymer substrate
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Cherenack, K.; Kattamis, A.; Long, K.; Cheng, I.-C.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG |
Showing items 1-25 of 47 (2 Page(s) Totally)
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