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Showing items 1-10 of 42 (5 Page(s) Totally)
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| 臺大學術典藏 |
2022-02-21T23:30:49Z |
First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
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SHU-WEI CHANG; Lu, Tsung Han; Yang, Cong Yi; Yeh, Cheng Jui; Huang, Min Kun; Meng, Ching Fan; Chen, Po Jen; Chang, Ting Hsuan; Chang, Yan Shiuan; Jhu, Jhe Wei; Hong, Tzu Chieh; Ke, Chu Chu; Yu, Xin Ren; Lu, Wen Hsiang; Baig, Mohammed Aftab; Cho, Ta Chun; Sung, Po Jung; Su, Chun Jung; Hsueh, Fu Kuo; Chen, Bo Yuan; Hu, Hsin Hui; Wu, Chien Ting; Lin, Kun Lin; Ma, William Cheng Yu; Lu, Darsen D.; Kao, Kuo Hsing; Lee, Yao Jen; Lin, Cheng Li; Huang, Kun Ping; Chen, Kun Ming; Li, Yiming; Samukawa, Seiji; Chao, Tien Sheng; Huang, Guo Wei; Wu, Wen Fa; Lee, Wen Hsi; JIUN-YUN LI; Shieh, Jia Min; Tarng, Jenn Hwan; Wang, Yeong Her; Yeh, Wen Kuan |
| 國立交通大學 |
2020-10-05T02:02:01Z |
Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters
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Sung, Po-Jung; Chang, Shu-Wei; Kao, Kuo-Hsing; Wu, Chien-Ting; Su, Chun-Jung; Cho, Ta-Chun; Hsueh, Fu-Kuo; Lee, Wen-Hsi; Lee, Yao-Jen; Chao, Tien-Sheng |
| 國立成功大學 |
2020-07-08 |
Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K
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盧達生; LU, DARSEN;De, Sourav;Baig, Md. Aftab;Qiu, Bo-Han;Sung, Po-Jung;Hsueh, Fu. K;Lee, Yao-Jen;Su, Chun-Jung |
| 國立交通大學 |
2020-07-01T05:22:11Z |
Trapping Depth and Transition Probability of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor
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Change, You-Tai; Tsai, Yueh-Lin; Peng, Kang-Ping; Su, Chun-Jung; Li, Pei-Wen; Lin, Horng-Chih |
| 國立交通大學 |
2020-07-01T05:22:10Z |
Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter
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Sung, Po-Jung; Su, Chun-Jung; Lo, Shih-Hsuan; Hsueh, Fu-Kuo; Lu, Darsen D.; Lee, Yao-Jen; Chao, Tien-Sheng |
| 國立交通大學 |
2020-07-01T05:21:14Z |
Nonvolatile molecular memory with the multilevel states based on MoS2 nanochannel field effect transistor through tuning gate voltage to control molecular configurations
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Lan, Yann-Wen; Hong, Chuan-Jie; Chen, Po-Chun; Lin, Yun-Yan; Yang, Chih-Hao; Chu, Chia-Jung; Li, Ming-Yang; Li, Lain-Jong; Su, Chun-Jung; Wu, Bo-Wei; Hou, Tuo-Hung; Li, Kai-Shin; Zhong, Yuan-Liang |
| 國立交通大學 |
2020-05-05T00:02:26Z |
Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing
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Wu, Tian-Li; Hu, Chenming; Yang, Ting-Hsin; Chen, Yi-Hsuan; Su, Chun-Jung |
| 國立交通大學 |
2020-05-05T00:02:22Z |
Study on random telegraph noise of high-idmetal-gate gate-all-around poly-Si nanowire transistors
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Lin, Horng-Chih; Chang, You-Tai; Tsai, Yueh-Lin; Peng, Kang-Ping; Su, Chun-Jung; Li, Pei-Wen |
| 國立交通大學 |
2020-05-05T00:02:22Z |
A novel photoresist-based film-profile engineering scheme for fabricating double-gated, recess-channel IGZO thin-film transistors
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Lin, Horng-Chih; Su, Chun-Jung; Li, Pei-Wen; Meng, Yu-Chiao; Huang, Yu-An; Peng, Kang-Pin |
| 國立交通大學 |
2020-04-01 |
Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates
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Wu, Tian-Li; Wang, Yu-Shun; Kao, Kuo-Hsing; Lee, Yao-Jen; Su, Chun-Jung; Yang, Ting-Hsin |
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