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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:43:06Z |
Novel chip standby current prediction model and ultrathin gate oxide scaling limit
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Su, HD; Chiou, BS; Lu, PC; Chang, MH; Lee, KH; Chao, CP; See, YC; Sung, JYC |
| 國立交通大學 |
2014-12-08T15:40:51Z |
A floating well method for exact capacitance-voltage measurement of nano technology
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Su, HD; Chiou, BS; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Chao, CP; See, YC; Sun, JYC |
| 國立交通大學 |
2014-12-08T15:40:26Z |
Characteristics of oxide breakdown and related impact on device of ultrathin (2.2 nm) silicon dioxide
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Su, HD; Chiou, BS; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Cha, CP; See, YC; Sun, JYC |
| 國立交通大學 |
2014-12-08T15:40:05Z |
Bi-mode breakdown test methodology of ultrathin oxide
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Su, HD; Chiou, BS; Ko, CY; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Chao, CP; See, YC; Sun, JYC |
Showing items 1-4 of 4 (1 Page(s) Totally)
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