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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:48:22Z |
On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps
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Li, Yiming; Su, Hsin-Wen; Chen, Chieh-Yang; Cheng, Hui-Wen; Chen, Yu-Yu; Chang, Han-Tung |
| 國立交通大學 |
2017-04-21T06:48:21Z |
Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-kappa/Metal Gate Bulk and SOI FinFETs
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Su, Hsin-Wen; Chen, Yu-Yu; Chen, Chieh-Yang; Cheng, Hui-Wen; Chang, Han-Tung; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:43:38Z |
Nanosized metal grains induced electrical characteristic fluctuation in 16-nm-gate high-kappa/metal gate bulk FinFET devices
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Li, Yiming; Cheng, Hui-Wen; Yiu, Chun-Yen; Su, Hsin-Wen |
| 國立交通大學 |
2014-12-08T15:31:00Z |
The intrinsic parameter fluctuation on high-kappa/metal gate bulk FinFET devices
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Li, Yiming; Su, Hsin-Wen; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung |
| 國立交通大學 |
2014-12-08T15:21:19Z |
A Unified 3D Device Simulation of Random Dopant, Interface Trap and Work Function Fluctuations on High-kappa/Metal Gate Device
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Li, Yiming; Cheng, Hui-Wen; Chiu, Yung-Yueh; Yiu, Chun-Yen; Su, Hsin-Wen |
Showing items 1-5 of 5 (1 Page(s) Totally)
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