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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Showing items 26-37 of 37  (2 Page(s) Totally)
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Institution Date Title Author
國立東華大學 2007 Comparison of Al0.32Ga0.68N/GaN Heterostructure Field-Effect Transistors with Different Channel Thicknesses Lin,Y. S.; Su,K. H.; Wang,T. B.; Wu,Y. H.; Hsu,R. T.; Su, J. L.; Hsu,W. C.
國立東華大學 2007 An “Improved symmetrically-graded doped-channel heterostructure field-effect transistor Lin,Y. S.; Wu,C.L.; Su,K. H.; Lee,C. S.; Chen,Y. J.; Hu,P. J.; Hsu,W. C.
國立東華大學 2006-08 InP-based composite-collector double heterojunction bipolar transistor Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang,T. B.; Su,K. H.
國立成功大學 2006-05-29 High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor Lee, C. S.; Chen, Y. J.; Hsu, Wei-Chou; Su, K. H.; Huang, J. C.; Huang, D. H.; Wu, C. L.
國立成功大學 2006-04 Improved InAlGaP-based heterostructure field-effect transistors Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Wang, T. B.; Su, K. H.; Huang, J. C.; Ho, Ching-Hwa
國立成功大學 2006-03 Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Su, K. H.; Wang, T. B.
國立東華大學 2006 Improved InAlGaP-based heterostructure field-effect transistors Lin,Y. S.; Huang,D. H.; Ho,C. H.; Huang,J. C.; Su,K. H.; Wang,T. B.; Hsu,W. C.
國立東華大學 2006 Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistor using emitter edge-thinning Lin,Y. S.; Huang,D. H.; Wang,T. B.; Su,K. H.; Hsu,W. C.
國立東華大學 2006 InP-based double heterojunction bipolar transistor with emitter edge-thinning Lin,Y. S.; Huang,D. H.; Wang,T. B.; Hsu,W. C.; Su,K. H.; Huang, J. C.; Yu,S. J.
國立東華大學 2005-08 Electrical characteristics of -doping InGaP/GaAs heterojunction-emitter bipolar transistor Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang, T. B.; Su,K. H.
國立成功大學 2005-06 Characteristics of In0.425Al0.575As-InxGa(1-x) as metamorphic HEMTs with pseudomorphic and symmetrically graded channels Hsu, Wei-Chou; Chen, Y. J.; Lee, C. S.; Wang, T. B.; Huang, J. C.; Huang, D. H.; Su, K. H.; Lin, Y. S.; Wu, C. L.
國立東華大學 2005 Characteristics of In0.425Al0.575As/ InXGa1-XAs metamorphic HEMTs with pseudomorphic and symmetrically- graded channel Lin,Y. S.; Wu,C. L.; Hsu,W. C.; Su,K. H.; Huang,D. H.; Huang,J. C.; Wang,T. B.; Lee,C. S.; Chen,Y. J.

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