|
"su pin"的相關文件
顯示項目 121-145 / 198 (共8頁)
<< < 1 2 3 4 5 6 7 8 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:38:25Z |
Impact of Surface Orientation on the Sensitivity of FinFETs to Process Variations-An Assessment Based on the Analytical Solution of the Schrodinger Equation
|
Wu, Yu-Sheng; Su, Pin |
| 國立交通大學 |
2014-12-08T15:38:05Z |
Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETs
|
Wu, Yu-Sheng; Hsieh, Hsin-Yuan; Hu, Vita Pi-Ho; Su, Pin |
| 國立交通大學 |
2014-12-08T15:37:33Z |
Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETs
|
Chen, William P. N.; Kuo, Jack J. Y.; Su, Pin |
| 國立交通大學 |
2014-12-08T15:36:58Z |
Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer Coupling
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:36:50Z |
Built-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III-V-on-Insulator n-MOSFETs
|
Yu, Chang-Hung; Su, Pin |
| 國立交通大學 |
2014-12-08T15:36:16Z |
Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:36:11Z |
FinFET SRAM Cell Optimization Considering Temporal Variability due to NBTI/PBTI and Surface Orientation
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:35:55Z |
Investigation of Backgate-Bias Dependence of Threshold-Voltage Sensitivity to Process and Temperature Variations for Ultra-Thin-Body Hetero-Channel MOSFETs
|
Yu, Chang-Hung; Su, Pin |
| 國立交通大學 |
2014-12-08T15:35:52Z |
Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits
|
Fan, Ming-Long; Yang, Shao-Yu; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:35:20Z |
Simulation and Investigation of Random Grain-Boundary-Induced Variabilities for Stackable NAND Flash Using 3-D Voronoi Grain Patterns
|
Yang, Ching-Wei; Su, Pin |
| 國立交通大學 |
2014-12-08T15:35:18Z |
Impacts of Single Trap Induced Random Telegraph Noise on Si and Ge Nanowire FETs, 6T SRAM Cells and Logic Circuits
|
Yang, Shao-Yu; Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:32:43Z |
Analysis of Germanium FinFET Logic Circuits and SRAMs with Asymmetric Gate to Source/Drain Underlap Devices
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:32:43Z |
Source/Drain Series Resistance Induced Feedback Effect on Drain Current Mismatch and Its Implication
|
Kuo, Jack J. -Y.; Fan, Ming-Long; Lee, Wei; Su, Pin |
| 國立交通大學 |
2014-12-08T15:32:43Z |
Design and Optimization of 6T SRAM using Vertically Stacked Nanowire MOSFETs
|
Tsai, Ming-Fu; Fan, Ming-Long; Pao, Chia-Hao; Chen, Yin-Nien; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:32:20Z |
Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:32:12Z |
Investigation of Single-Trap-Induced Random Telegraph Noise for Tunnel FET Based Devices, 8T SRAM Cell, and Sense Amplifiers
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:32:12Z |
Device Design and Analysis of Logic Circuits and SRAMs for Germanium FinFETs on SOI and Bulk Substrates
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:31:13Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:35Z |
Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nein; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:30Z |
Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:25Z |
Design and Analysis of Robust Tunneling FET SRAM
|
Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Investigation and Comparison of Work Function Variation for FinFET and UTB SOI Devices Using a Voronoi Approach
|
Chou, Shao-Heng; Fan, Ming-Long; Su, Pin |
| 國立交通大學 |
2014-12-08T15:30:04Z |
Variation Tolerant CLSAs for Nanoscale Bulk-CMOS and FinFET SRAM
|
Tsai, Ming-Fu; Tsai, Jen-Huan; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:03Z |
A Comprehensive Comparative Analysis of FinFET and Trigate Device, SRAM and Logic Circuits
|
Pao, Chia-Hao; Fan, Ming-Long; Tsai, Ming-Fu; Chen, Yin-Nien; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:29:40Z |
Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
顯示項目 121-145 / 198 (共8頁)
<< < 1 2 3 4 5 6 7 8 > >>
每頁顯示[10|25|50]項目
|
