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Showing items 151-175 of 198 (8 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:24:28Z |
Investigation of Low Frequency Noise in Uniaxial Strained PMOSFETs
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Kuo, Jack J. -Y.; Chen, William P. -N.; Su, Pin |
| 國立交通大學 |
2014-12-08T15:24:25Z |
Investigation of Static Noise Margin of Ultra-Thin-Body SOI SRAM Cells in Subthreshold Region using Analytical Solution of Poisson's Equation
|
Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:48Z |
"Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits"
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Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:33Z |
Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs
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Hsieh, Chien-Yu; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:32Z |
Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs
|
Yu, Chang-Hung; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin |
| 國立交通大學 |
2014-12-08T15:22:22Z |
Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
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Yu, Chang-Hung; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin |
| 國立交通大學 |
2014-12-08T15:21:55Z |
Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs
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Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Chen, Bo-Yuan; Huang, Guo-Wei |
| 國立交通大學 |
2014-12-08T15:21:55Z |
Impact of Uniaxial Strain on Channel Backscattering Characteristics and Drain Current Variation for Nanoscale PMOSFETs
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Lee, Wei; Kuo, Jack J. -Y.; Chen, Willian P. -N.; Su, Pin; Jeng, Min-Chie |
| 國立交通大學 |
2014-12-08T15:21:54Z |
A Closed-Form Quantum "Dark Space" Model for Predicting the Electrostatic Integrity of Germanium MOSFETs With High-k Gate Dielectric
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Wu, Yu-Sheng; Su, Pin |
| 國立交通大學 |
2014-12-08T15:21:25Z |
Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking
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Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:20Z |
Impacts of Single Trap Induced Random Telegraph Noise on FinFET Devices and SRAM Cell Stability
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:19Z |
Comprehensive Analysis of UTB GeOI Logic Circuits and 6T SRAM Cells considering Variability and Temperature Sensitivity
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Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:19Z |
Self-Heating Induced Feedback Effect on Drain Current Mismatch and Its Modeling
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Kuo, Jack J-Y.; Su, Pin |
| 國立交通大學 |
2014-12-08T15:20:59Z |
Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETs
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Chen, William Po-Nien; Kuo, Jack Jyun-Yan; Su, Pin |
| 國立交通大學 |
2014-12-08T15:19:54Z |
Design and Analysis of Ultra-Thin-Body SOI Based Subthreshold SRAM
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Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:16:47Z |
Investigation of scaling for multi-gate MOSFETs using analytical solution of 3-D Poisson's equation
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Wu, Yu-Sheng; Su, Pin |
| 國立交通大學 |
2014-12-08T15:14:23Z |
Investigation of analogue performance for process-induced-strained PMOSFETs
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Kuo, Jack J-Y; Chen, William P-N; Su, Pin |
| 國立交通大學 |
2014-12-08T15:14:12Z |
On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs
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Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Lin, Chien-Ting; Liang, Victor; Huang, Guo-Wei |
| 國立交通大學 |
2014-12-08T15:13:45Z |
On the enhanced impact ionization in uniaxial strained p-MOSFETs
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Su, Pin; Kuo, Jack J. -Y. |
| 國立交通大學 |
2014-12-08T15:12:40Z |
Investigation of anomalous inversion C-V characteristics for long-channel MOSFETs with leaky dielectrics: Mechanisms and reconstruction
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Lee, Wei; Su, Pin; Su, Ke-Wei; Chiang, Chung-Shi; Liu, Sally |
| 國立交通大學 |
2014-12-08T15:12:24Z |
Investigation of random dopant fluctuation for multi-gate metal-oxide-semiconductor field-effect transistors using analytical solutions of three-dimensional Poisson's equation
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Wu, Yu-Sheng; Su, Pin |
| 國立交通大學 |
2014-12-08T15:12:12Z |
Sensitivity of multigate MOSFETs to process variations - An assessment based on analytical solutions of 3-D Poisson's equation
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Wu, Yu-Sheng; Su, Pin |
| 國立交通大學 |
2014-12-08T15:12:04Z |
FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics
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Hu, Vita Pi-Ho; Fan, Ming-Long; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:12:04Z |
Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs
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Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Chen, Bo-Yuan; Huang, Guo-Wei; Hung, Cheng-Chou; Huang, Sheng-Yi; Fan, Cheng-Wen; Tzeng, Chih-Yuh; Chou, Sam |
| 國立交通大學 |
2014-12-08T15:12:03Z |
Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability-A Model-Based Approach
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Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te |
Showing items 151-175 of 198 (8 Page(s) Totally)
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