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| 臺大學術典藏 |
2018-09-10T15:22:53Z |
Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole
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Chen, Y.-P.;Su, V.;Lee, M.-L.;You, Y.-H.;Chen, P.-H.;Lin, R.-M.;Kuan, C.-H.; Chen, Y.-P.; Su, V.; Lee, M.-L.; You, Y.-H.; Chen, P.-H.; Lin, R.-M.; Kuan, C.-H.; CHIEH-HSIUNG KUAN |
| 臺大學術典藏 |
2018-09-10T09:47:44Z |
The analysis of nano-patterned sapphire substrates-induced compressive strain to enhance quantum-confined stark effect of InGaN-based light-emitting diodes
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Su, V.; You, Y.-H.; Lee, M.-L.; Hsieh, C.-J.; Kuan, C.-H.; Chen, H.-M.; Yang, H.-B.; Lin, H.-C.; Lin, R.-M.; Chu, F.-C.; Su, G.-Y.; Chen, P.-H.; CHIEH-HSIUNG KUANet al. |
| 臺大學術典藏 |
2018-09-10T09:47:44Z |
Investigation of nano-sized hole/post patterned sapphire substrates-induced strain-related quantum-confined stark effect of InGaN-based light-emitting diodes
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Su, V.; CHIEH-HSIUNG KUANet al.; Chen, P.-H.; Lee, M.-L.; You, Y.-H.; Hsieh, C.-J.; Kuan, C.-H.; Chen, Y.-C.; Lin, H.-C.; Yang, H.-B.; Lin, R.-M.; Lee, Q.-Y.; Chu, F.-C. |
| 臺大學術典藏 |
2018-09-10T09:47:43Z |
Utilizing two dimensional photonic crystals to study the relation between the air duty cycle and the light extraction efficiency of InGaN-based Light-Emitting Diodes
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Lee, M.-L.;Hsieh, C.-J.;Su, V.;You, Y.-H.;Chen, P.-H.;Lin, H.-C.;Yang, H.-B.;Kuan, C.-H.; Lee, M.-L.; Hsieh, C.-J.; Su, V.; You, Y.-H.; Chen, P.-H.; Lin, H.-C.; Yang, H.-B.; Kuan, C.-H.; CHIEH-HSIUNG KUAN |
| 國立臺灣大學 |
2008 |
Analysis of STI-induced mechanical stress-related Kink effect of 40nm PD SOI NMOS devices biased in saturation region
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Lin, I.; Su, V.; Kuo, J.; Chen, D.; Yeh, C.; Tsai, C.; Ma, M. |
Showing items 1-5 of 5 (1 Page(s) Totally)
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