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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:04:22Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
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Chang, Chia-Yuan; Chang, Edward Yi; Huang, Wei-Ching; Su, Yung-Hsuan; Trinh, Hai-Dang; Hsu, Heng-Tung; Miyamoto, Yasuyuki |
| 國立交通大學 |
2018-01-24T07:41:43Z |
超高真空化學氣相沉積系統成長高品質鍺磊晶層於磷化銦鎵/砷化鎵基板
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蘇詠萱; 張翼; Su, Yung-Hsuan; Chang, Yi |
| 國立交通大學 |
2015-07-21T08:30:56Z |
High Quality Ge Epitaxial Films Grown on In0.51Ga0.49P/GaAs and GaAs Substrates by Ultra High Vacuum Chemical Deposition
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Su, Yung-Hsuan; Tang, Shih-Hsuan; Nguyen, Chi Lang; Kuan, Ching-Wen; Yu, Hung-Wei; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:33Z |
Effect of Low Temperature Ge Seed Layer and Post Thermal Annealing on Quality of Ge1-xSix (0.05 <= x <= 0.1) Graded Buffer Layers by UHV-CVD
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Chi-Lang Nguyen; Nguyen Hong Quan; Binh-Tinh Tran; Su, Yung-Hsuan; Tang, Shih-Hsuan; Luo, Guang-Li; Chang, Edward-Yi |
| 國立交通大學 |
2014-12-08T15:33:16Z |
The integration of Ge and III-V materials on GaAs and Si for Post CMOS applications
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Chang, Edward Yi; Chang, Chia Hua; Tang, Shih Hsuan; Hai Dang Trinh; Kuo, Chien I.; Hsu, Ching Yi; Su, Yung Hsuan |
| 國立交通大學 |
2014-12-08T15:28:03Z |
C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric
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Tang, Shih Hsuan; Kuo, Chien I.; Hai Dang Trinh; Hudait, Mantu; Chang, Edward Yi; Hsu, Ching Yi; Su, Yung Hsuan; Luo, Guang-Li; Hong Quan Nguyen |
| 國立交通大學 |
2014-12-08T15:11:44Z |
High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
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Tang, Shih-Hsuan; Chang, Edward Yi; Hudait, Mantu; Maa, Jer-Shen; Liu, Chee-Wee; Luo, Guang-Li; Trinh, Hai-Dang; Su, Yung-Hsuan |
Showing items 1-7 of 7 (1 Page(s) Totally)
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