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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 實踐大學 |
2010 |
GaN-Based Power Flip-Chip LEDs With an Internal ESD Protection Diode on Cu Sub-Mount
|
Sun, Y.X.;Chen, W.S.;Hung, S.C.;Lam, K.T.;Liu, C.H.;Chang, S.J. |
| 國立成功大學 |
2009-06 |
Effects of the sapphire substrate thickness on the performances of GaN-based LEDs
|
Lam, Kin-Tak; Hung, Shang-Chao; Shen, Chien-Fu; Liu, Chun-Hsing; Sun, Y. X.; Chang, Shoou-Jinn |
| 實踐大學 |
2009 |
Effects of the sapphire substrate thickness on the performances of GaN-based LEDs
|
Lam, K.T.;Hung, S.C.;Shen, C.F.;Liu, C.H.;Sun, Y.X.;Chang, S.J. |
| 國立成功大學 |
2008-05-16 |
Nitride-based photodetectors with unactivated Mg-doped GaN cap layer
|
Lam, K. T.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Yu, C. L.; Lin, Y. C.; Sun, Y. X.; Chen, C. H. |
| 國立成功大學 |
2008 |
Highly ESD-reliable, nitride-based heterostructure p-i-n photodetectors with a p-AlGaN blocking layer
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Liu, C. H.; Lam, T. K.; Ko, T. K.; Chang, Shoou-Jinn; Sun, Y. X. |
| 國立成功大學 |
2008 |
InGaN/GaN multiple-quantum-well LEDs with Si-doped barriers
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Hung, H.; Lam, K. T.; Chang, Shoou-Jinn; Chen, C. H.; Kuan, H.; Sun, Y. X. |
Showing items 1-6 of 6 (1 Page(s) Totally)
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