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"sze simon m"
Showing items 26-75 of 238 (5 Page(s) Totally)
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| 國立交通大學 |
2019-04-03T06:42:27Z |
Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
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Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2019-04-03T06:41:13Z |
Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment
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Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:47Z |
The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector
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Chen, Chun-Kuei; Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chun-Chu; Huang, Hui-Chun; Huang, Wei-Chen; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:47Z |
Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing
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Wang, Zhuo-Rui; Li, Yi; Su, Yu-Ting; Zhou, Ya-Xiong; Cheng, Long; Chang, Ting-Chang; Xue, Kan-Hao; Sze, Simon M.; Miao, Xiang-Shui |
| 國立交通大學 |
2019-04-02T06:00:29Z |
The influence of temperature on set voltage for different high resistance state in 1T1R devices
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Tan, Yung-Fang; Su, Yu-Ting; Chen, Min-Chen; Chang, Ting-Chang; Tsai, Tsung-Ming; Tseng, Yi-Ting; Yang, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Lin, Chun-Chu; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:28Z |
Reconfigurable Boolean Logic in Memristive Crossbar: The Principle and Implementation
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Hu, Si-Yu; Li, Yi; Cheng, Long; Wang, Zhuo-Rui; Chang, Ting-Chang; Sze, Simon M.; Miao, Xiang-Shui |
| 國立交通大學 |
2019-04-02T06:00:27Z |
The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure
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Ruan, Dun-Bao; Liu, Po-Tsun; Gan, Kai-Jhih; Chiu, Yu-Chuan; Yu, Min-Chin; Chien, Ta-Chun; Chen, Yi-Heng; Kuo, Po-Yi; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:19Z |
Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N-2 and O-2 ambient
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:00Z |
TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology
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Gan, Kai-Jhih; Liu, Po-Tsun; Chiu, Yu-Chuan; Ruan, Dun-Bao; Chien, Ta-Chun; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:59Z |
Performance improvements of tungsten and zinc doped indium oxide thin film transistor by fluorine based double plasma treatment with a high-K gate dielectric
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Yu, Min-Chin; Gan, Kai-Jhih; Chien, Ta-Chun; Chen, Yi-Heng; Kuo, Po-Yi; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:51Z |
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan-Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:36Z |
Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM
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Wu, Cheng-Hsien; Lin, Shih-Kai; Pan, Chih-Hung; Chen, Po-Hsun; Lin, Wen-Yan; Chang, Ting-Chang; Tsai, Tsung-Ming; Xu, You-Lin; Shih, Chih-Cheng; Lin, Yu-Shuo; Chen, Wen-Chung; Wang, Ming-Hui; Zhang, Sheng-Dong; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:36Z |
Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications
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Yao, Jing-Neng; Lin, Yueh-Chin; Hsu, Heng-Tung; Yang, Kai-Chun; Hsu, Hisang-Hua; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:30Z |
Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
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Tseng, Yi-Ting; Chen, I-Chieh; Chang, Ting-Chang; Huang, J. C.; Shih, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Wang, Ming-Hui; Huang, Wei-Chen; Chen, Min-Chen; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:28Z |
Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kuo, Po-Yi; Yu, Min-Chin; Kan, Kai-Zhi; Chien, Ta-Chun; Chen, Yi-Heng; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:26Z |
Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique
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Yang, Chih-Cheng; Chen, Po-Hsun; Shih, Chih-Cheng; Wang, Ming-Hui; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Chen, Wen-Chung; Chen, Min-Chen; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Huang, Jen-Wei; Sze, Simon M.; Chang, Ting-Chang |
| 國立交通大學 |
2019-04-02T05:59:04Z |
Nitric Acid Oxidized ZrO2 as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:04Z |
Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:03Z |
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
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Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2019-04-02T05:59:03Z |
Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Chih-Tsung; Chang, Geng-Wei; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:58:56Z |
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile Memory
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:54Z |
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:52Z |
Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors
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Ruan, Dun-Boo; Liu, Po-Tsun; Chen, Yi-Heng; Chiu, Yu-Chuan; Chien, To-Chun; Yu, Min-Chin; Gan, Kai-Jhih; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:58:50Z |
Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kan, Kai-Zhi; Yu, Min-Chin; Chien, Ta-Chun; Chen, Yi-Heng; Kuo, Po-Yi; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:58:40Z |
InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
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Chang, Po-Chun; Hsiao, Chih-Jen; Lumbantoruan, Franky Juanda; Wu, Chia-Hsun; Lin, Yen-Ku; Lin, Yueh-Chin; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:39Z |
Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold
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Tsai, Yi-Chia; Magyari-Kope, Blanka; Li, Yiming; Samukawa, Seiji; Nishi, Yoshio; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:57:55Z |
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:57:52Z |
Silicon introduced effect on resistive switching characteristics of WOX thin films
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:56:52Z |
A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector
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Lin, Chih-Yang; Chen, Ying-Chen; Gu, Meiqi; Pan, Chih-Hung; Jin, Fu-Yuan; Tseng, Yi-Ting; Hsieh, Cheng Chih; Wu, Xiaohan; Chen, Min-Chen; Chang, Yao-Feng; Zhou, Fei; Fowler, Burt; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhao, Yonggang; Sze, Simon M.; Banetjee, Sanjay; Lee, Jack C. |
| 國立交通大學 |
2018-08-21T05:56:29Z |
Impact of Post Deposition Annealing on Resistive Switching in Ga2O3-Based Conductive-Bridge RAM Devices
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Gan, Kai-jhih; Liu, Po-Tsun; Chien, Ta-Chun; Ruan, Dun-Bao; Chiu, Yu-Chuan; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:56:29Z |
High Mobility Tungsten-Doped Thin-Film Transistor on Polyimide Substrate with Low Temperature Process
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Yu, Min-Chin; Gan, Kai-jhih; Chien, Ta-Chun; Kuo, Po-Yi; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:30Z |
Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
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Wu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:16Z |
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
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Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:06Z |
Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment
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Du, Xiaoqin; Wu, Xiaojing; Chang, Ting-Chang; Chang, Kuan-Chang; Pan, Chih-Hung; Wu, Cheng-Hsien; Lin, Yu-Shuo; Chen, Po-Hsun; Zhang, Shengdong; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:04Z |
Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array
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Zhou, Ya-Xiong; Li, Yi; Su, Yu-Ting; Wang, Zhuo-Rui; Shih, Ling-Yi; Chang, Ting-Chang; Chang, Kuan-Chang; Long, Shi-Bing; Sze, Simon M.; Miao, Xiang-Shui |
| 國立交通大學 |
2018-08-21T05:53:56Z |
Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory
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Wu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:52Z |
Performance improvement after nitridation treatment in HfO2-based resistance random-access memory
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Wang, Ming-Hui; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Wu, Pei-Yu; Huang, Hui-Chun; Chen, Wen-Chung; Huang, Jen-Wei; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:49Z |
Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory
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Zheng, Hao-Xuan; Chang, Ting-Chang; Xue, Kan-Hao; Su, Yu-Ting; Wu, Cheng-Hsien; Shih, Chih-Cheng; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Chen, Chun-Kuei; Miao, Xiang-Shui; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:41Z |
Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture
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Liu, Po Tsun; Ruan, Dun Bao; Yeh, Xiu Yun; Chiu, Yu Chuan; Zheng, Guang Ting; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:19Z |
Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kuo, Po-Yi; Yu, Min-Chin; Gan, Kai-Jhih; Chien, Ta-Chun; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:18Z |
Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory
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Su, Yu-Ting; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Hsin-Lu; Chen, Min-Chen; Yang, Chih-Cheng; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:11Z |
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
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Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:02Z |
Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer Structure
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Tseng, Yi-Ting; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Huang, Hui-Chun; Yang, Cheng-Chi; Lin, Chih-Yang; Wu, Cheng-Hsien; Zheng, Hao-Xuan; Zhang, Shengdong; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:37Z |
Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory
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Wang, Zhuo-Rui; Su, Yu-Ting; Li, Yi; Zhou, Ya-Xiong; Chu, Tian-Jian; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Sze, Simon M.; Miao, Xiang-Shui |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:27Z |
Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode
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Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Shih, Chih-Cheng; Lin, Chih-Yang; Chen, Po-Hsun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:21Z |
Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Cheng-Chi; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Min-Chen; Wang, Ruey-Chi; Leu, Ching-Chich; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:18Z |
Resistance Switching Characteristics Induced by O-2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:06Z |
Reducing operation voltages by introducing a low-k switching layer in indium-tin-oxide-based resistance random access memory
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Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:55:57Z |
Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Su, Yu-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Yang, Chih-Cheng; Chen, Min-Chen; Tu, Chun-Hao; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
Showing items 26-75 of 238 (5 Page(s) Totally)
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