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Showing items 36-45 of 238 (24 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:51Z |
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan-Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:36Z |
Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM
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Wu, Cheng-Hsien; Lin, Shih-Kai; Pan, Chih-Hung; Chen, Po-Hsun; Lin, Wen-Yan; Chang, Ting-Chang; Tsai, Tsung-Ming; Xu, You-Lin; Shih, Chih-Cheng; Lin, Yu-Shuo; Chen, Wen-Chung; Wang, Ming-Hui; Zhang, Sheng-Dong; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:36Z |
Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications
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Yao, Jing-Neng; Lin, Yueh-Chin; Hsu, Heng-Tung; Yang, Kai-Chun; Hsu, Hisang-Hua; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:30Z |
Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
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Tseng, Yi-Ting; Chen, I-Chieh; Chang, Ting-Chang; Huang, J. C.; Shih, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Wang, Ming-Hui; Huang, Wei-Chen; Chen, Min-Chen; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:28Z |
Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kuo, Po-Yi; Yu, Min-Chin; Kan, Kai-Zhi; Chien, Ta-Chun; Chen, Yi-Heng; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:26Z |
Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique
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Yang, Chih-Cheng; Chen, Po-Hsun; Shih, Chih-Cheng; Wang, Ming-Hui; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Chen, Wen-Chung; Chen, Min-Chen; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Huang, Jen-Wei; Sze, Simon M.; Chang, Ting-Chang |
| 國立交通大學 |
2019-04-02T05:59:04Z |
Nitric Acid Oxidized ZrO2 as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:04Z |
Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:03Z |
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
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Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2019-04-02T05:59:03Z |
Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Chih-Tsung; Chang, Geng-Wei; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Sze, Simon M. |
Showing items 36-45 of 238 (24 Page(s) Totally)
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