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机构 日期 题名 作者
國立交通大學 2019-04-02T05:59:24Z Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition Wang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM
國立交通大學 2019-04-02T05:59:13Z SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS
國立交通大學 2019-04-02T05:58:33Z Present and future trends in device science and technologies - Preface Shur, MS; Sze, SM; Xu, JM
國立交通大學 2014-12-08T15:47:36Z Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition Lai, WC; Chang, CY; Yokoyama, M; Guo, JD; Tsang, JS; Chan, SH; Bow, JS; Wei, SC; Hong, RH; Sze, SM
國立交通大學 2014-12-08T15:46:31Z Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H-2 plasma treatment Liu, PT; Chang, TC; Mor, YS; Sze, SM
國立交通大學 2014-12-08T15:46:20Z Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes Chang, TC; Liu, PT; Shih, FY; Sze, SM
國立交通大學 2014-12-08T15:46:15Z Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxane Chang, TC; Liu, PT; Mei, YJ; Mor, YS; Perng, TH; Yang, YL; Sze, SM
國立交通大學 2014-12-08T15:46:11Z The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment Chang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY
國立交通大學 2014-12-08T15:46:07Z Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interface Liu, PT; Chang, TC; Yang, YL; Cheng, YF; Shih, FY; Lee, JK; Tsai, E; Sze, SM
國立交通大學 2014-12-08T15:46:05Z The novel precleaning treatment for selective tungsten chemical vapor deposition Chang, TC; Mor, YS; Liu, PT; Sze, SM; Yang, YL; Tsai, MS; Chang, CY

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