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机构	日期	题名	作者
國立中山大學	2006	Activation of carbon nanotube emitters by using supercritical carbon dioxide fluids with propyl alcohol	P.T. Liu;C.T. Tsai;T.C. Chang;K.T. King;P.L. Chang;C.M. Chen;H.F. Cheng
國立中山大學	2006	Short-diode like diffusion capacitance of organic light emission devices	M.N. Tasi;T.C. Chang;P.T. Liu;C.W. Ko;C.J. Chen;K.M. Lo
國立中山大學	2006	The Improved Memory Window for Ge Nanocrystals Embedded in SiON Layer	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;Simon M. Sze;C.Y. Chang
國立中山大學	2006	Formation of silicon germanium nitride layer with distributed charge storage elements	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;W.R. Chen;C.C. Tsai;L.T. Chang;C.Y. Chan
國立中山大學	2006	Improvement of Hydrogenated Amorphous Silicon TFT Performances With Low-k Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer	T.S. Chang;T.C. Chang;P.T. Liu;T.S. Chang;C.H. Tu;F.S. Yeh
國立中山大學	2006	High-performance polycrystalline silicon thin-film transistors with oxide–nitride–oxide gate dielectric and multiple nanowire channels	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;C.C. Tsai;T.S. Chang;Chen-Hsin Lien
國立中山大學	2005-10	Thermal Stress Effect on the Ferroelectric Characteristics of BaTiO3 Thin Films for Nonvolatile Memory Applications	K.H. Chen;Y.C. Chen;S.Y. Lin;C.M. Wang;T.C. Chang
國立中山大學	2005-10	Fabrication and Characteristics of Ba(Ti0.9,Zr0.1)O3 Thin Films on Glass Substrate	K.H. Chen;C.F. Yang;Y.C. Chen;T.C. Chang
國立中山大學	2005-04	Effects of Laser Annealing on the Electrical Characteristics of (Ba0.7,Sr0.3)(Ti0.9,Zr0.1)O3 Thin Films	K.H. Chen;K.S. Kao;C.C. Cheng;Y.C. Chen;T.C. Chang
中原大學	2005	Evaluation of wastewater reclamation processes in a high-tech industrial park	S.H. Chuang;T.C. Chang;S.J. You;C.F. Ouyang
國立中山大學	2005	Improvement of reliability for polycrystalline thin film transistor using self-aligned fluorinated silica glass spacers	C.H. Tu;T.C. Chang;P.T. Liu;H.W. Zan;Y.H. Tai;Y.C. Wu;C.Y. Chang
國立中山大學	2005	Effects of oxygen plasma ashing on barrier dielectric SiCN film	C.W. Chen;T.C. Chang;P.T. Liu;T.S. Tsai;T.Y. Tseng
國立中山大學	2005	Low power device with NiSi2 nanocrystals embedded in silicon dioxide layer	P.H. Yen;C.H. Yu;L.J. Chen;H.H. Wu;P.T. Liu;T.C. Chang
國立中山大學	2005	Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectric	F.M. Yang;T.C. Chang;P.T. Liu;C.W. Chen;Y.H. Tai;J.C. Lou
國立中山大學	2005	An interfacial investigation of high dielectric constant material hafnium oxide on Si substrate	S.C. Chen;J.C. Lou;C.H. Chien;P.T. Liu;T.C. Chang
國立中山大學	2005	High performance hydrogenated amorphous Si TFT for AMLCD and AMOLED	C.W. Chen;T.C. Chang;P.T. Liu;T.Y. Tseng
國立中山大學	2005	Leakage conduction behavior in electron-beam-cured nanoporous silicate films	P.T. Liu;T.M. Tsai;T.C. Chang
國立中山大學	2005	A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide	T.C. Chang;S.T. Yan;Y.T. Chen;P.T. Liu;S.M. Sze
國立中山大學	2005	Electrical degradation of n-channel poly-si TFT under AC stress	C.W. Chen;T.C. Chang;P.T. Liu;H.Y. Lu;C.F. Weng;C.W. Hu;T.Y. Tseng
國立中山大學	2005	Effects of channel width on electrical characteristics of polysilicon TFTs with nanowire channel	Y.C. Wu;T.C. Chang;P.T. Liu;C.S. Chen;C.H. Tu;H.W. Zan;Y.H. Tai;C.Y. Chang
國立中山大學	2005	Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channel	Y.C. Wu;T.C. Chang;P.T. Liu;C.W. Chou;Y.C. Wu;C.H. Tu;C.Y. Chang
國立中山大學	2005	Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low voltage nonvotatile memeory technology	T.C. Chang;P.T. Liu;S.T. Yan;S.M. Sze
國立中山大學	2005	Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-flim transistors by pattern-dependent metal-induced lateral crystallization	Y.C. Wu;T.C. Chang;C.W. Chen;Y.C. Wu;P.T. Liu;C.H. Tu;C.Y. Chang
國立中山大學	2005	Memeory effect of oxide/ oxygen-incorporated silicon carbide/ oxide sandwiched structure	T.C. Chang;P.T. Liu;S.T. Yan;F.M. Yang;S.M. Sze
國立中山大學	2005	Enhanced performance of poly-Si thin film transistors using fluorine ion implantation	C.H. Tu;T.C. Chang;P.T. Liu;H.W. Zan;Y.H. Tai;Y.C. Wu;C.Y. Chang
國立中山大學	2005	Mobility enhancement of polycrystalline-Si thin-film transistor using nanowire channels by pattern-dependent metal-induced lateral crystallization	Y.C. Wu;T.C. Chang;P.T. Liu;Y.C. Wu;C.W. Chou;C.Y. Chang
中原大學	2004	Effects of SiO2 content and solution pH in raw materials on Ni-Zn ferrite Magnetic properties	K.H.Wu;Y.C.Chang;T. C.Chang;Y.S.Chiu;T.R.Wu
國立中山大學	2004	Silicide Formation of Au Thin Films on (1 0 0) Si during Annealing	J.F. Chang; T.F. Young; Y.L. Yang; H.Y. Ueng; T.C. Chang
國立中山大學	2004	Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application	T.C. Chang;T.M. Tsai;P.T. Liu;S.T. Yan;Y.C. Chang;H. Aoki;S.M. Sze;T.Y. Tseng
國立中山大學	2004	Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material	T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;T.Y. Tseng
國立中山大學	2004	CMP of Ultra Low-k Material Porous-Polysilazane (PPSZ) for Interconnect Applications	T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;Y.C. Chang;T.Y. Tseng
國立中山大學	2004	CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications	T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;Y.C. Chang;T.Y. Tseng
國立中山大學	2004	CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications	T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;T.Y. Tseng
國立中山大學	2004	A novel distributed charge storage with GeO2 nano-dots	T.C. Chang;S.T. Yan;P.T. Liu;C.H. Hsu;M.T. Tang;S.M. Sze
國立中山大學	2004	Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications	T.C. Chang;S.T. Yan;P.T. Liu;H. Aoki;S.M. Sze
國立中山大學	2004	Structrual characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization	J.H. Wang;P.T. Liu;T.C. Chang;L.J. Chen
國立中山大學	2004	CMP of ultra low-k Methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications	T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;T.Y. Tseng
國立中山大學	2004	Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integraged interconnect application	T.C. Chang;T.M. Tsai;P.T. Liu;Y.C. Chang;J. Aoki;S.M. Sze;T.Y. Tseng
國立中山大學	2004	Quasisuperlattice storage: A concept of multilevel charge stoage	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;H.H. Wu;S.M. Sze
國立中山大學	2004	Cu-penetration induced breakdown mechanism for a-SiCN	C.W. Chen;P.T. Liu;T.C. Chang;J.H. Yang;T.M. Tsai;H.H. Wu;T.Y. Tseng
國立中山大學	2004	Leakage behavior of the quasi-superlattice stack for multilevel charge storage	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;H.H. Wu;S.M. Sze
國立中山大學	2004	Investigation of the electrical properties and reliability of amorphous SiCN	C.W. Chen;T.C. Chang;P.T. Liu;T.M. Tsai;C.H. Huang;J.M. Chen;T.Y. Tseng
國立中山大學	2004	Short-Channel Poly-Si thin film transistors with ultrathin chanel and self-alinged tungsten-clad source/drain	H.W. Zan;T.C. Chang;S.P. Shih;D.Z. Peng;P.Y. Kuo;T.Y. Huang;C.Y.C. Chang;P.T. Liu
國立中山大學	2004	Quasisuperlattice storage: A concept of multilevel charge stoage	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;H.H. Wu;S.M. Sze
國立中山大學	2004	A method of fabricating superior oxide/nitride/oxide gate stack	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;S.H. Lin;S.M. Sze
國立中山大學	2004	High performance polycrystalline silicon thin film transistor with multiple nano-wire channels and LDD structure	Y.C. Wu;T.C. Chang;P.T. Liu;H.W. Zan;Y.H. Tai
國立中山大學	2004	Silicide formation of Au thin films on (100) Si during annealing	J.F. Chang;T.R. Young;Y. Yang;H.Y. Ueng;T.C. Chang
國立中山大學	2004	A novel approach for fabricating germanium nanocrystals for nonvolatile memory application	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;S.H. Lin;S.M. Sze
國立中山大學	2004	Study on eching profile of nanoporous silica	C.W. Chen;T.C. Chang;P.T. Liu;T.S. Tsai;H.H. Wu;T.Y. Tseng
國立中山大學	2004	Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material	T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;T.Y. Tseng

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