臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
國立中山大學	2009	NiSiGe nanocrystals for nonvolatile memory devices	C.W. Hu;T.C. Chang;C.H. Tu;C.N. Chiang;C.C. Lin;S.M. Sze;T.Y. Tseng
國立中山大學	2009	Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of Si1.33Ge0.67O2 and Si2.67Ge1.33N2 Layers	W.R. Chen;T.C. Chang;Y.T. Hsieh;C.Y. Chang
國立中山大學	2009	Temperature-Dependent Biaxial Compressive Strain Effect on p-MOSFETs	Y.J. Kuo;T.C. Chang;C.H. Dai;S.C. Chen;J. Lu;S.H. Ho;C.H. Chao;T.F. Young;O. Cheng;C.T. Huang
國立中山大學	2009	Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress	Y.J. Kuo;T.C. Chang;P.H. Yeh;S.C. Chen;C.H. Dai;C.H. Chao;T.F. Young;O. Cheng;C.T. Huang
嘉南藥理大學	2008-08	Effects of Optical Flow on Gait Patterns in Parkinsonian Rats	H. Y. LEE; T. C. CHANG; T. H. HSIEH; Y. W. LIU
國立中山大學	2008	Nonvolatile memory characteristics influenced by the different crystallization of Ni–Si and Ni–N nanocrystals	W.R. Chen;T.C. Chang;J.L. Yeh;C.Y. Chang;S.C. Chen
國立中山大學	2008	Tungsten Oxide/Tungsten Nanocrystals for Nonvolatile Memory Devices	C.H. Chen;T.C. Chang;I.H. Liao;P.B. Xi;U.S. Chen;Joe Hsieh;Jason Chen;Tensor Huang;S.M. Sze;J.R. Chen
國立中山大學	2007	N+-doped-layer free microcrystalline silicon thin-film transistor fabricated with the CuMg as source/drain metal	M.C. Wang;T.C. Chang;P.T. Liu;R.W. Xiao;L.F. Lin;Y.Y. Li;J.R. Chen
國立中山大學	2007	Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;P.S. Lin;S.C. Chen;J.Y. Chin;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2007	Analysis of parasitic resistance and channel sheet conductance of a-Si : H TFT under mechanical bending	M.C. Wang;T.C. Chang;P.T. Liu;S.W. Tsao;J.R. Chen

Showing items 21-30 of 180 (18 Page(s) Totally)
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