| 臺大學術典藏 |
2022-01-07T02:14:22Z |
Nanomechanics of Biomolecular Motor Proteins in Micromachined Structures
|
T-C Ma; C-H Lin; C-T Lin; C-S Chen; CHUIN-SHAN CHEN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Short range structure of dilute nitride GaAsSbN
|
H. H. Lin,;C. L. Chiou,;Y. T. Lin,;T. C. Ma,;J. S. Wu,;Z. C. Feng,; H. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:40Z |
Short range structure of dilute nitride GaAsSbN
|
H. H. Lin,;C. L. Chiou,;Y. T. Lin,;T. C. Ma,;J. S. Wu,;Z. C. Feng,; H. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:19:11Z |
1.4μW/channel 16-channel EEG/ECoG Processor for Smart Brain Sensor SoC
|
T.-C. Chen;T.-H. Lee;Y.-H. Chen;T.-C. Ma;T.-D. Chuang;C.-J. Chou;C.-H. Yang;T.-H. Lin;L.-G. Chen; T.-C. Chen; T.-H. Lee; Y.-H. Chen; T.-C. Ma; T.-D. Chuang; C.-J. Chou; C.-H. Yang; T.-H. Lin; L.-G. Chen; LIANG-GEE CHEN; TSUNG-HSIEN LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE
|
T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE
|
T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy
|
Y. T. Lin,;T. C. Ma,;H. H. Lin; Y. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy
|
T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Nitrogen atomic rearrangement in thermally annealed GaAsSbN
|
Y. T. Lin,;T. C. Ma,;H. H. Lin,;J. D. Wu,;Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; J. D. Wu,; Y. S. Huang,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye
|
H. H. Lin;T. C. Ma;Y. R. Lin;J. P. Wang;C. H. Huang; H. H. Lin; T. C. Ma; Y. R. Lin; J. P. Wang; C. H. Huang; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:16Z |
A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species
|
Y. T. Lin;T. C. Ma;H. H. Lin; Y. T. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN
|
T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN
|
Y. T. Lin;T. C. Ma;S. P. Wang;H. H. Lin; Y. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN
|
S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,
|
H. P. Hsu,;Y. N. Huang,;Y. S. Huang,;Y. T. Lin,;T. C. Ma,;H. H. Lin,;K. K. Tiong,;P. Sitarek,;J. Misiewicz,; H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN
|
S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Band structure of dilute nitride GaAsSbN
|
Y. T. Lin;T. C. Ma;T. Y. Chen;H. H. Lin; Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Origin of the annealing-induced blue-shift in GaAsSbN
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
GaAsSbN/GaAs long wavelength PIN detectors
|
C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy
|
H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Design and fabrication of AlGaAs ambient light detectors
|
T. C. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy
|
T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Effect of thermal annealing on the optical properties of GaAsSbN
|
Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Origin of the annealing-induced blue-shift in GaAsSbN bulk layers
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates
|
T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
