臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T07:08:00Z	Design and fabrication of AlGaAs ambient light detectors	T. C. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:07:59Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Effect of thermal annealing on the optical properties of GaAsSbN	Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Origin of the annealing-induced blue-shift in GaAsSbN bulk layers	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates	T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m	C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:44Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; T. Y. Chen,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:01Z	Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy	T. C. Ma; Y. T. Lin; T. Y. Chen; H. H. Lin; T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	GaAsSbN grown on GaAs by gas source molecular beam epitaxy	T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN

Showing items 21-30 of 33 (4 Page(s) Totally)
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