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Showing items 26-33 of 33 (2 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m
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C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy
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T. C. Ma,; Y. T. Lin,; T. Y. Chen,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:01Z |
Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy
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T. C. Ma; Y. T. Lin; T. Y. Chen; H. H. Lin; T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:00Z |
Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy
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Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
GaAsSbN grown on GaAs by gas source molecular beam epitaxy
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T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy
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T. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2010-01 |
Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN
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Y. T. Lin;T. C. Ma;H. H. Lin;J. D. Wu;Y. S. Huang; Y. T. Lin; T. C. Ma; H. H. Lin; J. D. Wu; Y. S. Huang; HAO-HSIUNG LIN |
| 國立臺灣海洋大學 |
2009 |
Piezoreflectance and photoreflectance study of annealing effects on GaAs0.916Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy
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H. P. Hsu; Y. N. Huang; Y. S. Huang; Y. T. Lin; T. C. Ma; H. H. Lin; K. K. Tiong; P. Sitarek; J. Misiewicz |
Showing items 26-33 of 33 (2 Page(s) Totally)
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