臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T07:43:10Z	A charge pump current missmatch calibration technique for ΔΣ fractional-N PLLs in 0.18-μm CMOS	W.-H. Chiu;T.-S. Chang;T.-H. Lin; W.-H. Chiu; T.-S. Chang; T.-H. Lin; TSUNG-HSIEN LIN
國立交通大學	2014-12-12T01:13:19Z	助聽器上的低功耗迴音消除器之設計與實現	石博文; bo-wen shi; 張添烜; T. S. Chang
朝陽科技大學	2009-05-01	Effects of Open Trench Siding on Vibration Screening Effectiveness Using Two-Dimensional Boundary Element Method	蔡佩勳; 張子修; P.H. Tsai ;T.S. Chang
國立高雄第一科技大學	2007.02	An ARIS-based model for implementing information systems from a strategic perspective	T.-H.Chang;H.-P.Fu;J.-R.Ou;T.-S.Chang
國立中山大學	2007	Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD	T.S. Chang;T.C. Chang;P.T. Liu;T.S.W. Tsao;F.S. Yeh
國立高雄第一科技大學	2006.02	The innovative conveying device application for transferring articles between two-levels of a multi-story building	T.-S.Chang;H.-P.Fu;R.-C.Hsu
中原大學	2006-8-25	Free volume and gas transport properties in polymeric membranes: insight understanding by pals measurement and md simulation	K. L. Tung;K. H. Chang;T. S. Chang;C. C. Hu;J. Y. Lai;Y. M. Sun;R. C. Ruaan;Y. C. Jean;
中原大學	2006	Free Volume and Gas Transport Properties in Polymeric Membranes: Insight Understanding by PALS Measurement and MD Simulation	Tung, K. L.;K. H. Chang;T. S. Chang;C. C. Hu;R.C. Ruaan;J. Y. Lai;Y. M. Sun;Y. C. Jean;
國立中山大學	2006	Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs	T.S. Chang;T.C. Chang;P.T. Liu;T.S. Chang;F.S. Yeh
國立中山大學	2006	Application of the low dielectric methyl-silsesquiazane (MSZ)as a passivation layer on TFT-LCD	T.S. Chang;T.C. Chang;P.T. Liu;C.Y. Chiang;S.C. Chen;F.S. Yeh
國立中山大學	2006	Improvement of Hydrogenated Amorphous Silicon TFT Performances With Low-k Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer	T.S. Chang;T.C. Chang;P.T. Liu;T.S. Chang;C.H. Tu;F.S. Yeh
國立中山大學	2006	High-performance polycrystalline silicon thin-film transistors with oxide–nitride–oxide gate dielectric and multiple nanowire channels	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;C.C. Tsai;T.S. Chang;Chen-Hsin Lien

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