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显示项目 11-27 / 27 (共1页)
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机构 日期 题名 作者
國立中山大學 2008-05 A Novel Vertical Sidewall MOSFET Using Smart Source/Body Contact without Floating-Body Effect Tai-Yi Lee;Jyi-Tsong Lin;Yi-Chuen Eng;Kao-Cheng Lin
國立中山大學 2008-05 A Novel Vertical Sidewall MOSFETs Using Smart Source/Body Contact without Floating-Body Effect Tai-Yi Lee;Jyi-Tsong Lin;Po-Hsieh Lin;Yi-Chuen Eng
國立中山大學 2007-05 Investigation of the Novel attribution in A new Vertical MOSFET with Upper and Internal L-shape Buried Oxide Jyi-Tsong Lin;Tai-Yi Lee;Kao-Cheng Lin;Yu-Sheng Chen
國立中山大學 2007-01 Analysis of Si-body Thickness Variation for a new 40 nm Gate Length bFDSOI Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學 2006-11 Investigation Of The Novel Attribution In A New Vertical MOSFET With Upper And Internal L-Shape Buried Oxide Jyi-Tsong Lin;Yu-Sheng Chen;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學 2006-10 An Investigation of the effects of Si thickness-induced variation of the electrical characteristics in FDSOI with block oxide Yi-Chuen Eng;Jyi-Tsong Lin;Kuo-Dong Huang;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學 2006-10 A Nanoscale bSPIFET to Overcome CMOS Scaling Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學 2006-07 Ultra-Short-Channel Characteristics of Planar MOSFETs with Block Oxide Jyi-Tsong Lin;Yi-Chuen Eng;Kuo-Dong Huang;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學 2006-07 HIGH PERFORMANCE THIN-FILM TRANSISTOR WITH L-SHAPED BLOCK OXIDE Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin;Kuo-Dong Huang
國立中山大學 2006-05 Investigation of a Pseudo Vertical SOI MOSFET With L-Shaped Block Layer Jyi-Tsong Lin;Kao-Cheng Lin;Tai-Yi Lee;Yi-Chuen Eng
國立中山大學 2006-05 A Novel Vertical MOSFET with Smart Source/ Body Contact Tai-Yi Lee;Jyi-Tsong Lin;Yi-Chuen Eng;Kao-Cheng Lin
國立中山大學 2006-05 A Novel Device Architecture: Silicon on Partial Insulator with Block Oxide Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學 2006-05 Elimination of Floating-body Effect and Thermal Instability in a Nano Quasi-SOI MOSFET with π-shaped Semiconductor Layer Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學 2006-05 A NOVEL FDSOI MOSFET WITH BLOCK OXIDE ENCLOSED BODY Jyi-Tsong Lin;Yi-Chuen Eng;Kuo-Dong Huang;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學 2006-05 Investigation of the Novel Attributes of a Vertical MOSFET Device with Internal Block Layer: a 2D Simulation Study Jyi-Tsong Lin;Kao-Cheng Lin;Tai-Yi Lee;Yi-Chuen Eng
國立中山大學 2006-05 A Nano Quasi-SOI MOSFET with π-shaped Semiconductor Layer Yi-Chuen Eng;Jyi-Tsong Lin;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學 2006-05 An Impact of Block Oxide on 50 nm Gate Length Planar MOSFETs Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin;Kuo-Dong Huang

显示项目 11-27 / 27 (共1页)
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