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機構 日期 題名 作者
臺大學術典藏 2020-06-16T06:33:13Z Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915)) Amour, A.St.;Liu, C.W.;Sturm, J.C.;Lacroix, Y.;Thewalt, M.L.W.; Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:58:51Z Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates Liu, C.W.;St. Amour, A.;Sturm, J.C.;Lacroix, Y.R.J.;Thewalt, M.L.W.;Magee, C.W.;Eaglesham, D.; Liu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:58:51Z Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates Liu, C.W.;St. Amour, A.;Sturm, J.C.;Lacroix, Y.R.J.;Thewalt, M.L.W.;Magee, C.W.;Eaglesham, D.; Liu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:46Z Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915)) Amour, A.St.;Liu, C.W.;Sturm, J.C.;Lacroix, Y.;Thewalt, M.L.W.; Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:46Z Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915)) Amour, A.St.;Liu, C.W.;Sturm, J.C.;Lacroix, Y.;Thewalt, M.L.W.; Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:46Z Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition Liu, C.W.;Amour, A.St.;Sturm, J.C.;Lacroix, Y.R.J.;Thewalt, M.L.W.; Liu, C.W.; Amour, A.St.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:46Z Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition Liu, C.W.;Amour, A.St.;Sturm, J.C.;Lacroix, Y.R.J.;Thewalt, M.L.W.; Liu, C.W.; Amour, A.St.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:46Z Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100) St. Amour, A.;Liu, C.W.;Sturm, J.C.;Lacroix, Y.;Thewalt, M.L.W.; St. Amour, A.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:46Z Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100) St. Amour, A.;Liu, C.W.;Sturm, J.C.;Lacroix, Y.;Thewalt, M.L.W.; St. Amour, A.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T04:55:30Z Growth and photoluminescence of strained 〈 110 〉 Si/Si1-xGex/Si quantum wells grown by rapid thermal chemical vapor deposition Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU

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