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Showing items 1-6 of 6 (1 Page(s) Totally) 1 View [10|25|50] records per page
臺大學術典藏 |
2018-09-10T07:07:59Z |
Photoluminescence of InAs0.04P0.67Sb0.29
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Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
國立臺灣大學 |
2009 |
以氣態源分子束磊晶成長銻磷砷化銦材料
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蔡濟印; Tsai, Gene |
國立臺灣大學 |
2009 |
Band alignment of InAs1-xSbx (0.05?x?0.13)/InAs0.67P0.23Sb0.10 heterostructures
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Wu, Chen-Jun; Tsai, Gene; Lin, Hao-Hsiung |
國立臺灣大學 |
2008 |
Photoluminescence of InAs0.04P0.67Sb0.29
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Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung |
國立臺灣大學 |
2007 |
InAsPSb quaternary alloy grown by gas source molecular beam epitaxy
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Tsai, Gene; Wang, De-Lun; Wu, Chia-En; Wu, Chen-Jun; Lin, Yan-Ting; Lin, Hao-Hsiung |
國立臺灣大學 |
2005-05 |
Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy
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Tsai, Gene; Lin, Hao-Hsiung |
Showing items 1-6 of 6 (1 Page(s) Totally) 1 View [10|25|50] records per page
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