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"tsai tm"的相关文件
显示项目 1-25 / 36 (共2页)
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| 國立交通大學 |
2014-12-08T15:43:55Z |
Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane
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Chang, TC; Liu, PT; Tsai, TM; Yeh, FS; Tseng, TY; Tsai, MS; Chen, BC; Yang, YL; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damage
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Sze, SM; Mei, YJ |
| 國立交通大學 |
2014-12-08T15:43:11Z |
Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:46Z |
Effective strategy for porous organosilicate to suppress oxygen ashing damage
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Liu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:32Z |
Preventing dielectric damage of low-k organic siloxane by passivation treatment
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment
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Chang, TC; Liu, PT; Mor, YS; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment
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Mor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Recovering dielectric loss of low dielectric constant organic siloxane during the photoresist removal process
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:53Z |
Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Chu, CJ; Pan, FM; Lur, W; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:39Z |
The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposure
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Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Mei, YJ; Sheu, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:07Z |
Moisture-induced material instability of porous organosilicate glass
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Chang, TC; Chen, CW; Liu, PT; Mor, YS; Tsai, HM; Tsai, TM; Yan, ST; Tu, CH; Tseng, TY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:40:54Z |
Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology
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Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tsengb, TY |
| 國立交通大學 |
2014-12-08T15:40:42Z |
Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)
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Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:40:06Z |
Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications
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Liu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:45Z |
CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications
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Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Investigation of the electrical properties and reliability of amorphous SiCN
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Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Huang, HC; Chen, JM; Tseng, CH; Liu, CC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:42Z |
CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications
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Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
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Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Study on etching profile of nanoporous silica
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Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Wu, HH; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material
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Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Cu-penetration induced breakdown mechanism for a-SiCN
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Chen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:06Z |
Effects of oxygen plasma ashing on barrier dielectric SiCN film
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Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:36:06Z |
Electrical degradation of N-channel poly-Si TFT under AC stress
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Chen, CW; Chang, TC; Liu, PT; Lu, HY; Tsai, TM; Weng, CF; Hu, CW; Tseng, TY |
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