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"tsai tsung ming"的相關文件
顯示項目 11-20 / 144 (共15頁)
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| 國立交通大學 |
2019-04-02T06:00:29Z |
The influence of temperature on set voltage for different high resistance state in 1T1R devices
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Tan, Yung-Fang; Su, Yu-Ting; Chen, Min-Chen; Chang, Ting-Chang; Tsai, Tsung-Ming; Tseng, Yi-Ting; Yang, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Lin, Chun-Chu; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:51Z |
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan-Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:36Z |
Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM
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Wu, Cheng-Hsien; Lin, Shih-Kai; Pan, Chih-Hung; Chen, Po-Hsun; Lin, Wen-Yan; Chang, Ting-Chang; Tsai, Tsung-Ming; Xu, You-Lin; Shih, Chih-Cheng; Lin, Yu-Shuo; Chen, Wen-Chung; Wang, Ming-Hui; Zhang, Sheng-Dong; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:26Z |
Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique
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Yang, Chih-Cheng; Chen, Po-Hsun; Shih, Chih-Cheng; Wang, Ming-Hui; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Chen, Wen-Chung; Chen, Min-Chen; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Huang, Jen-Wei; Sze, Simon M.; Chang, Ting-Chang |
| 國立交通大學 |
2019-04-02T05:59:03Z |
Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Chih-Tsung; Chang, Geng-Wei; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:57:55Z |
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:57:52Z |
Silicon introduced effect on resistive switching characteristics of WOX thin films
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:56:52Z |
A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector
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Lin, Chih-Yang; Chen, Ying-Chen; Gu, Meiqi; Pan, Chih-Hung; Jin, Fu-Yuan; Tseng, Yi-Ting; Hsieh, Cheng Chih; Wu, Xiaohan; Chen, Min-Chen; Chang, Yao-Feng; Zhou, Fei; Fowler, Burt; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhao, Yonggang; Sze, Simon M.; Banetjee, Sanjay; Lee, Jack C. |
| 國立交通大學 |
2018-08-21T05:54:30Z |
Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
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Wu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:16Z |
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
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Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M. |
顯示項目 11-20 / 144 (共15頁)
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