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"tsai tsung ming"的相關文件
顯示項目 96-105 / 144 (共15頁)
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| 國立交通大學 |
2014-12-08T15:30:31Z |
The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
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Chu, Tian-Jian; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Hsing-Hua; Chen, Jung-Hui; Chang, Kuan-Chang; Young, Tai-Fa; Chen, Kai-Hsang; Syu, Yong-En; Chang, Geng-Wei; Chang, Yao-Feng; Chen, Min-Chen; Lou, Jyun-Hao; Pan, Jhih-Hong; Chen, Jian-Yu; Tai, Ya-Hsiang; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chang, Geng-Wei; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:51Z |
Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Jung-Hui; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Chen, Jian-Yu; Tung, Cheng-Wei; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:12Z |
The resistive switching characteristics in TaON films for nonvolatile memory applications
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Chen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Chang, Kuan-Chang; Tsai, Tsung-Ming; Yang, Kai-Hsiang; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:28:27Z |
Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Chang, Geng-Wei; Syu, Yong-En; Su, Yu-Ting; Liu, Guan-Ru; Liao, Kuo-Hsiao; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:27Z |
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:19Z |
Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Tseng, Bae-Heng; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:26:31Z |
Effect of Lateral Body Terminal on Silicon-Oxide-Nitride-Oxide-Silicon Thin-Film Transistors
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Li, Hung-Wei; Chang, Ting-Chang; Chang, Geng-Wei; Lin, Chia-Sheng; Tsai, Tsung-Ming; Jian, Fu-Yen; Tai, Ya-Hsiang; Lee, Ming-Hsien |
| 國立交通大學 |
2014-12-08T15:22:46Z |
Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors
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Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Syu, Yong-En; Chang, Kuan-Chang; Tai, Ya-Hsiang; Jian, Fu-Yen; Hung, Ya-Chi |
顯示項目 96-105 / 144 (共15頁)
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