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國立成功大學 |
2014-08 |
Investigation of trap properties of Hf0.83Zr0.17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f) noise and random telegraph noise analyses
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Tsar, Shih-Chang; Wu, San-Lein; Huang, Po-Chin; Wang, Bo-Chin; Tsai, Kai-Shiang; Kao, Tsung-Hsien; Yang, Chih-Wei; Chen, Cheng-Guo; Cheng, Osbert; Fang, Yean-Kuen; Chang, Shoou-Jinn; Chen, Jone-Fang |
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