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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立臺灣大學 |
2003 |
DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs
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Tu, Hsing-Yuan; Chou, Tao-Hsuan; Lin, Yo-Sheng; Chiu, Hsien-Chin; Chen, Ping-Yu; Wu, Wen-Chung; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
Single-voltage-supply operation of Ga0.51In0.49P/AlGaAS/IN0.15Ga0.85As PHEMTS with high-power density
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Tu, Hsing-Yuan; Pan, Hsuan-Yu; Lu, Shey-Shi |
| 國立臺灣大學 |
2002-10 |
An Analysis of the Anomalous Dip in Scattering Parameter of InGaP–GaAs Heterojunction Bipolar Transistors (HBTs)
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Tu, Hsing-Yuan; Lin, Yo-Sheng; Chen, Ping-Yu; Lu, Shey-Shi; Pan, Hsuan-Yu |
| 國立臺灣大學 |
2002 |
An Analysis of the Anomalous Dip in Scattering Parameter S22 of InGaP–GaAs Heterojunction Bipolar Transistors (HBTs)
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Tu, Hsing-Yuan; Lin, Yo-Sheng; Chen, Ping-Yu; Lu, Shey-Shi; Pan, Hsuan-Yu |
| 國立臺灣大學 |
2001 |
A novel interpretation of Transducer Power Gain by Optical Analogy
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Pan, Hsuan-Yu; Tu, Hsing-Yuan; Lu, Shey-Shi; Meng, C. C. |
Showing items 1-5 of 5 (1 Page(s) Totally)
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